Deep level and photoluminescence studies of Er-implanted GaN films
文献类型：期刊论文
| 作者 | Song, SF ; Chen, WD ; Hsu, CC ; Xu, XR |
| 刊名 | JOURNAL OF LUMINESCENCE
 |
| 出版日期 | 2007 |
| 卷号 | 122页码:365 |
| 关键词 | DEFECTS |
| ISSN号 | 0022-2313 |
| 通讯作者 | Song, SF: Beijing Univ, Minist Educ, Key Lab Luminescence & Opt Informat, Inst Optoelect Technol, Beijing 100044, Peoples R China. |
| 中文摘要 | Titanium doped amorphous carbon nitride (a-CNx) films with a nitrogen content of similar to 24 at. % were synthesized by radio frequency magnetron sputtering method. The effects of incorporating Ti on the mechanical properties of a-CNx films were investigated by nanoindentation, scanning electron microscope, x-ray diffraction spectra, and x-ray photoelectron spectroscopy, respectively. It was found that nanometer sized TiN crystallites were formed and embedded in the a-CNx matrix, causing an enhancement of hardness from similar to 28 to similar to 40 GPa in the a-CNx films. The improved mechanical properties with addition of Ti are attributed to the densified microstructure due to the development of fine grain size of TiN and sp(3) C-N bonds. These TiN nanocrystal grains are separated by an amorphous phase, preventing dislocation movement and hence enhancing the hardness of the film. The increased sp(3) C-N bond fraction induced by incorporation of Ti also plays an important role in the enhancement of hardness. (c) 2007 American Institute of Physics. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/35662]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Song, SF,Chen, WD,Hsu, CC,et al. Deep level and photoluminescence studies of Er-implanted GaN films[J]. JOURNAL OF LUMINESCENCE,2007,122:365. |
| APA | Song, SF,Chen, WD,Hsu, CC,&Xu, XR.(2007).Deep level and photoluminescence studies of Er-implanted GaN films.JOURNAL OF LUMINESCENCE,122,365. |
| MLA | Song, SF,et al."Deep level and photoluminescence studies of Er-implanted GaN films".JOURNAL OF LUMINESCENCE 122(2007):365. |
入库方式： OAI收割
来源：物理研究所
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