Deep level transient spectroscopy studies of Er and Pr implanted GaN films
文献类型：期刊论文
| 作者 | Song, SF ; Chen, WD ; Xu, ZJ ; Xu, XR |
| 刊名 | ACTA PHYSICA SINICA
 |
| 出版日期 | 2006 |
| 卷号 | 55期号:3页码:1407 |
| 关键词 | N-TYPE GAN DEFECTS EPITAXY TRAPS |
| ISSN号 | 1000-3290 |
| 通讯作者 | Song, SF: Beijing Jiaotong Univ, Inst Optoelect Technol, Beijing 100044, Peoples R China. |
| 中文摘要 | Deep level transient spectroscopy measurements were used to characterize the electrical properties of metal organic chemical vapor deposition grown undoped, Er-implanted and Pr-implanted GaN films. Only one deep level located at 0.270 eV below the conduction band was found in the as-grown GaN films. But four defect levels located at 0.300 eV, 0.188 eV, 0.600 eV and 0.410 eV below the conduction band were found in the Er-implanted GaN films after annealing at 900 degrees C for 30 min, and four defect levels located at 0.280 eV, 0.190 eV, 0.610 eV and 0.390 eV below the conduction band were found in the Pr-implanted GaN films after annealing at 1050 degrees C for 30min. The origins of the deep defect levels are discussed. After annealing at 900 degrees C for 30min in a nitrogen flow, Er-related 1538nm luminescence peaks could be observed for the Er-implanted GaN sample. The energy-transfer and luminescence mechanism of the Er-implanted GaN film are described. |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/35663]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Song, SF,Chen, WD,Xu, ZJ,et al. Deep level transient spectroscopy studies of Er and Pr implanted GaN films[J]. ACTA PHYSICA SINICA,2006,55(3):1407. |
| APA | Song, SF,Chen, WD,Xu, ZJ,&Xu, XR.(2006).Deep level transient spectroscopy studies of Er and Pr implanted GaN films.ACTA PHYSICA SINICA,55(3),1407. |
| MLA | Song, SF,et al."Deep level transient spectroscopy studies of Er and Pr implanted GaN films".ACTA PHYSICA SINICA 55.3(2006):1407. |
入库方式： OAI收割
来源：物理研究所
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