Defect characteristics of ZnO film grown on (0001) sapphire with an ultrathin gallium wetting layer
文献类型：期刊论文
| 作者 | Wang, Y ; Du, XL ; Mei, ZX ; Zeng, ZQ ; Xu, QY ; Xue, QK ; Zhang, Z |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 2004 |
| 卷号 | 273期号:1-2页码:100 |
| 关键词 | TRANSMISSION ELECTRON-MICROSCOPY CHEMICAL-VAPOR-DEPOSITION THREADING DISLOCATIONS GAN LAYERS THIN-FILMS EPITAXY SI HETEROSTRUCTURES POLARITY BUFFER |
| ISSN号 | 0022-0248 |
| 通讯作者 | Wang, Y: Chinese Acad Sci, Inst Phys, Beijing Lab Electron Microscopy, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | The defect characteristics of ZnO film grown on (0 0 0 1) sapphire substrate using an ultrathin Ga wetting layer are investigated by transmission electron microscopy and X-ray diffractometry compared to that of the ZnO film without Ga. It was found that the defects of the ZnO film with a Ga layer were prominently reduced and a high-quality film was formed. Within this ZnO film, most defects near the interface are mixed-type dislocations that interact strongly, leading to a remarkable reduction of dislocations in the upper part of the epitaxial film with a total dislocation density of as low as 8 x 10(8) cm(-2). Almost no pure screw dislocations were observed. Furthermore, the film exhibits a single domain structure, and no inversed domains were found. The role of the ultrathin gallium layer in the defect reduction and inversion domain suppression is discussed. (C) 2004 Elsevier B.V. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/35668]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang, Y,Du, XL,Mei, ZX,et al. Defect characteristics of ZnO film grown on (0001) sapphire with an ultrathin gallium wetting layer[J]. JOURNAL OF CRYSTAL GROWTH,2004,273(1-2):100. |
| APA | Wang, Y.,Du, XL.,Mei, ZX.,Zeng, ZQ.,Xu, QY.,...&Zhang, Z.(2004).Defect characteristics of ZnO film grown on (0001) sapphire with an ultrathin gallium wetting layer.JOURNAL OF CRYSTAL GROWTH,273(1-2),100. |
| MLA | Wang, Y,et al."Defect characteristics of ZnO film grown on (0001) sapphire with an ultrathin gallium wetting layer".JOURNAL OF CRYSTAL GROWTH 273.1-2(2004):100. |
入库方式： OAI收割
来源：物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。