中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Defects in Nd2CuO4 and Nd1.815Ce0.185CuO4 single crystals

文献类型:期刊论文

作者Jia, LS ; Yang, W ; Chen, XL ; Yan, XL
刊名PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS
出版日期2004
卷号400期号:3-4页码:117
关键词HALL-COEFFICIENT TRANSPORT CARRIERS GROWTH
ISSN号0921-4534
通讯作者Jia, LS: Chinese Acad Sci, Inst Phys, S 3rd St, Beijing 100080, Peoples R China.
中文摘要We describe here four kinds of defects found in Nd2CuO4 and Nd1.815Ce0.185CuO4 single crystals grown by the traveling solvent floating zone method. These defects include: (1) cracks, (2) inclusions, (3) gas bubbles and (4) uneven distribution of Ce (4+). The formation mechanism of these defects and the measures of eliminating these defects are discussed. It is thought that the preparation of raw materials and stringent growth conditions are necessary to obtain high quality of Nd2CuO4 and Nd1.815Ce0.185CuO4 single crystals. (C) 2003 Elsevier B.V. All rights reserved.
收录类别SCI
语种英语
公开日期2013-09-17
源URL[http://ir.iphy.ac.cn/handle/311004/35679]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Jia, LS,Yang, W,Chen, XL,et al. Defects in Nd2CuO4 and Nd1.815Ce0.185CuO4 single crystals[J]. PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS,2004,400(3-4):117.
APA Jia, LS,Yang, W,Chen, XL,&Yan, XL.(2004).Defects in Nd2CuO4 and Nd1.815Ce0.185CuO4 single crystals.PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS,400(3-4),117.
MLA Jia, LS,et al."Defects in Nd2CuO4 and Nd1.815Ce0.185CuO4 single crystals".PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS 400.3-4(2004):117.

入库方式: OAI收割

来源:物理研究所

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