Deposition of p-type nc-SiC : H thin films with subtle carbon incorporation for applications in p-i-n solar cells
文献类型：期刊论文
| 作者 | Xu, Y ; Diao, HW ; Zhang, SB ; Li, XD ; Zeng, XB ; Wang, WJ ; Liao, XB |
| 刊名 | ACTA PHYSICA SINICA
 |
| 出版日期 | 2007 |
| 卷号 | 56期号:5页码:2915 |
| ISSN号 | 1000-3290 |
| 中文摘要 | This paper presents a detailed study on the effects of carbon incorporation and substrate temperature on structural, optical, and electrical properties of p-type nanocrystalline amorphous silicon films. A p-nc-SiC: H thin film with optical gap of 1.92 eV and activation energy of 0.06 eV is obtained through optimizing the plasma parameters. By using this p-type window layer, single junction diphasic nc-SiC : H/a-Si : H solar cells have been successfully prepared with a V(oc) of 0.94 eV. |
| 收录类别 | SCI |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/35764]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Xu, Y,Diao, HW,Zhang, SB,et al. Deposition of p-type nc-SiC : H thin films with subtle carbon incorporation for applications in p-i-n solar cells[J]. ACTA PHYSICA SINICA,2007,56(5):2915. |
| APA | Xu, Y.,Diao, HW.,Zhang, SB.,Li, XD.,Zeng, XB.,...&Liao, XB.(2007).Deposition of p-type nc-SiC : H thin films with subtle carbon incorporation for applications in p-i-n solar cells.ACTA PHYSICA SINICA,56(5),2915. |
| MLA | Xu, Y,et al."Deposition of p-type nc-SiC : H thin films with subtle carbon incorporation for applications in p-i-n solar cells".ACTA PHYSICA SINICA 56.5(2007):2915. |
入库方式： OAI收割
来源：物理研究所
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