Designing two-dimensional electron gases in GaAs/InGaAs/AlGaAs, delta-doped AlGaAs/GaAs, and AlGaAs/InGaAs/GaAs heterostructures for single electron transistor application
文献类型：期刊论文
| 作者 | Fu, Y ; Wang, TH ; Willander, M |
| 刊名 | JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 2001 |
| 卷号 | 89期号:3页码:1759 |
| 关键词 | COULOMB-BLOCKADE OSCILLATIONS IONIZED IMPURITY SCATTERING QUANTUM-WELLS OFFSETS |
| ISSN号 | 0021-8979 |
| 通讯作者 | Fu, Y: Chalmers Univ Technol, Microtechnol Ctr, Fysikgrand 3, S-41296 Gothenburg, Sweden. |
| 中文摘要 | We have theoretically studied two types of two-dimensional electron gases (2DEGs) in GaAs/ InGaAs/AlGaAs and delta -doped-AlGaAs/GaAs heterostructures for single-electron transistor applications by self-consistently solving the Schrodinger and Poisson equations. Assuming the dominant effect of the ionized impurity scattering in determining the low-held carrier mobility, it has been shown that introducing an InGaAs layer to the conventional GaAs/AlGaAs heterostructure greatly increases the sheet density of the 2DEG and the corresponding carrier mobility. The delta -doped AlGaAs/GaAs and AlGaAs/InGaAs/GaAs heterostructures provide us with an even better control of the 2DEG with higher sheet density and carrier mobility. (C) 2001 American Institute of Physics. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/35799]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Fu, Y,Wang, TH,Willander, M. Designing two-dimensional electron gases in GaAs/InGaAs/AlGaAs, delta-doped AlGaAs/GaAs, and AlGaAs/InGaAs/GaAs heterostructures for single electron transistor application[J]. JOURNAL OF APPLIED PHYSICS,2001,89(3):1759. |
| APA | Fu, Y,Wang, TH,&Willander, M.(2001).Designing two-dimensional electron gases in GaAs/InGaAs/AlGaAs, delta-doped AlGaAs/GaAs, and AlGaAs/InGaAs/GaAs heterostructures for single electron transistor application.JOURNAL OF APPLIED PHYSICS,89(3),1759. |
| MLA | Fu, Y,et al."Designing two-dimensional electron gases in GaAs/InGaAs/AlGaAs, delta-doped AlGaAs/GaAs, and AlGaAs/InGaAs/GaAs heterostructures for single electron transistor application".JOURNAL OF APPLIED PHYSICS 89.3(2001):1759. |
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来源：物理研究所
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