中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Determination of a misfit dislocation complex in SiGe/Si heterostructures by image deconvolution technique in HREM

文献类型:期刊论文

作者Wang, D ; Zou, J ; He, WZ ; Chen, H ; Li, FH ; Kawasaki, K ; Oikawa, T
刊名ULTRAMICROSCOPY
出版日期2004
卷号98期号:2-4页码:259
关键词RESOLUTION ELECTRON-MICROSCOPY SINGLE HETEROSTRUCTURES FOCUS-VARIATION BUFFER LAYER RECONSTRUCTION DENSITY STRAIN SI
ISSN号0304-3991
通讯作者Li, FH: Chinese Acad Sci, Inst Phys, POB 603, Beijing 100080, Peoples R China.
中文摘要The core structure of a dislocation complex in SiGe/Si system composed of a perfect 60degrees dislocation and an extended 60 dislocation has been revealed at atomic level. This is attained by applying the image deconvolution technique in combination with dynamical diffraction effect correction to an image taken with a 200 kV field-emission high-resolution electron microscope. The possible configuration of the dislocation complex is analyzed and their Burgers vectors are determined. (C) 2003 Elsevier B.V. All rights reserved.
收录类别SCI
语种英语
公开日期2013-09-17
源URL[http://ir.iphy.ac.cn/handle/311004/35817]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Wang, D,Zou, J,He, WZ,et al. Determination of a misfit dislocation complex in SiGe/Si heterostructures by image deconvolution technique in HREM[J]. ULTRAMICROSCOPY,2004,98(2-4):259.
APA Wang, D.,Zou, J.,He, WZ.,Chen, H.,Li, FH.,...&Oikawa, T.(2004).Determination of a misfit dislocation complex in SiGe/Si heterostructures by image deconvolution technique in HREM.ULTRAMICROSCOPY,98(2-4),259.
MLA Wang, D,et al."Determination of a misfit dislocation complex in SiGe/Si heterostructures by image deconvolution technique in HREM".ULTRAMICROSCOPY 98.2-4(2004):259.

入库方式: OAI收割

来源:物理研究所

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