Determination of the relative permittivity of the AlGaN barrier layer in strained AlGaN/GaN heterostructures
文献类型：期刊论文
| 作者 | Zhao, JZ ; Lin, ZJ ; Corrigan, TD ; Zhang, Y ; Lu, YJ ; Lu, W ; Wang, ZG ; Chen, H |
| 刊名 | CHINESE PHYSICS B
 |
| 出版日期 | 2009 |
| 卷号 | 18期号:9页码:3980 |
| 关键词 | SPECTROSCOPY METALS NI |
| ISSN号 | 1674-1056 |
| 通讯作者 | Zhao, JZ: Shandong Univ, Sch Phys, Jinan 250100, Peoples R China. |
| 中文摘要 | Using the measured capacitance-voltage curves and the photocurrent spectrum obtained from the Ni Schottky contact on a strained Al(0.3)Ga(0.7)N/GaN heterostructure, the value of the relative permittivity of the AlGaN barrier layer was analysed and calculated by self-consistently solving Schrodinger's and Poisson's equations. It is shown that the calculated values of the relative permittivity are different from those formerly reported, and reverse biasing the Ni Schottky contact has an influence on the value of the relative permittivity. As the reverse bias increases from 0 V to - 3 V, the value of the relative permittivity decreases from 7.184 to 7.093. |
| 收录类别 | SCI |
| 资助信息 | National Natural Science Foundation of China [10774090]; National Basic Research Program of China [2007CB936602] |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/35861]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhao, JZ,Lin, ZJ,Corrigan, TD,et al. Determination of the relative permittivity of the AlGaN barrier layer in strained AlGaN/GaN heterostructures[J]. CHINESE PHYSICS B,2009,18(9):3980. |
| APA | Zhao, JZ.,Lin, ZJ.,Corrigan, TD.,Zhang, Y.,Lu, YJ.,...&Chen, H.(2009).Determination of the relative permittivity of the AlGaN barrier layer in strained AlGaN/GaN heterostructures.CHINESE PHYSICS B,18(9),3980. |
| MLA | Zhao, JZ,et al."Determination of the relative permittivity of the AlGaN barrier layer in strained AlGaN/GaN heterostructures".CHINESE PHYSICS B 18.9(2009):3980. |
入库方式： OAI收割
来源：物理研究所
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