Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier diodes
文献类型：期刊论文
| 作者 | Cao, ZF ; Lin, ZJ ; Lu, YJ ; Luan, CB ; Yu, YX ; Chen, H ; Wang, ZG |
| 刊名 | CHINESE PHYSICS B
 |
| 出版日期 | 2012 |
| 卷号 | 21期号:1 |
| 关键词 | BREAKDOWN VOLTAGE GAN |
| ISSN号 | 1674-1056 |
| 通讯作者 | Lin, ZJ: Shandong Univ, Sch Phys, Jinan 250100, Peoples R China. |
| 中文摘要 | Rectangular AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) were fabricated, and the gate and the source of the HFETs consisted of AlGaN/AlN/GaN Schottky barrier diodes (SBDs). Based on the measured forward current-voltage and the capacitance-voltage characteristics of the AlGaN/AlN/GaN SBDs, the series resistance under the Schottky contacts (R-S) was calculated using the method of power consumption, which has been proved to be valid. Finally, the method of power consumption for calculating R-S was successfully used to study the two-dimensional electron gas electron mobility for a series of circular AlGaN/AlN/GaN SBDs. It is shown that the series resistance under the Schottky contacts cannot be neglected and is important for analysing and characterizing the AlGaN/AlN/GaN SBDs and the AlGaN/AlN/GaN HFETs. |
| 收录类别 | SCI |
| 资助信息 | National Natural Science Foundation of China [10774090]; National Basic Research Program of China [2007CB936602] |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/35862]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Cao, ZF,Lin, ZJ,Lu, YJ,et al. Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier diodes[J]. CHINESE PHYSICS B,2012,21(1). |
| APA | Cao, ZF.,Lin, ZJ.,Lu, YJ.,Luan, CB.,Yu, YX.,...&Wang, ZG.(2012).Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier diodes.CHINESE PHYSICS B,21(1). |
| MLA | Cao, ZF,et al."Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier diodes".CHINESE PHYSICS B 21.1(2012). |
入库方式： OAI收割
来源：物理研究所
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