Development of thermodynamic modeling of oxygen-doped GaN semiconductor
文献类型：期刊论文
| 作者 | Li, JB ; Tedenac, JC ; Li, CR ; Zhang, WJ |
| 刊名 | CALPHAD-COMPUTER COUPLING OF PHASE DIAGRAMS AND THERMOCHEMISTRY
 |
| 出版日期 | 2003 |
| 卷号 | 27期号:1页码:1 |
| 关键词 | CHEMICAL-VAPOR-DEPOSITION N-TYPE INFRARED ELLIPSOMETRY ELECTRONIC-STRUCTURE NATIVE DEFECTS EFFECTIVE-MASS PHASE EPITAXY POINT-DEFECTS P-TYPE CARRIER |
| ISSN号 | 0364-5916 |
| 通讯作者 | Li, JB: Univ Montpellier 2, CNRS, UMR 5617, Lab Phys Chim Mat Condens, Pl E Bataillon, F-34095 Montpellier 5, France. |
| 中文摘要 | The thermodynamic modeling of GaN was refined to describe the semiconducting properties of GaN semiconductors with the use of CEF (Compound Energy Formalism). Oxygen doped GaN was taken as an example. The formation energies of charged component compounds were defined as functions of the Fermi-level based on the results of the ab initio calculations and adjusted to fit experimental data. The yellow luminescence (YL) effect in unintentionally doped GaN was described. (C) 2003 Published by Elsevier Science Ltd. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/35892]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Li, JB,Tedenac, JC,Li, CR,et al. Development of thermodynamic modeling of oxygen-doped GaN semiconductor[J]. CALPHAD-COMPUTER COUPLING OF PHASE DIAGRAMS AND THERMOCHEMISTRY,2003,27(1):1. |
| APA | Li, JB,Tedenac, JC,Li, CR,&Zhang, WJ.(2003).Development of thermodynamic modeling of oxygen-doped GaN semiconductor.CALPHAD-COMPUTER COUPLING OF PHASE DIAGRAMS AND THERMOCHEMISTRY,27(1),1. |
| MLA | Li, JB,et al."Development of thermodynamic modeling of oxygen-doped GaN semiconductor".CALPHAD-COMPUTER COUPLING OF PHASE DIAGRAMS AND THERMOCHEMISTRY 27.1(2003):1. |
入库方式： OAI收割
来源：物理研究所
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