中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
DIAMOND GROWTH ON POROUS SILICON BY HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITION

文献类型:期刊论文

作者LIU, ZH ; ZONG, BQ ; LIN, ZD
刊名THIN SOLID FILMS
出版日期1995
卷号254期号:1-2页码:3
关键词THIN-FILMS EPITAXIAL-GROWTH NUCLEATION MICROSTRUCTURE MICROSCOPY SI
ISSN号0040-6090
通讯作者LIU, ZH: CHINESE ACAD SCI,INST PHYS,STATE KEY LAB SURFACE PHYS,POB 603,BEIJING 100080,PEOPLES R CHINA.
中文摘要Diamond films have been grown on porous silicon by hot filament chemical vapor deposition. The films are characterized by scanning electron microscopy, Raman spectroscopy and X-ray diffraction analysis, showing that continuous diamond films with crystallinity are obtained on porous silicon. The demonstration of diamond growth on porous silicon seems to suggest that the nanoscale microstructures of porous silicon play an important role in nucleation and growth of diamond.
收录类别SCI
语种英语
公开日期2013-09-17
源URL[http://ir.iphy.ac.cn/handle/311004/35908]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
LIU, ZH,ZONG, BQ,LIN, ZD. DIAMOND GROWTH ON POROUS SILICON BY HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITION[J]. THIN SOLID FILMS,1995,254(1-2):3.
APA LIU, ZH,ZONG, BQ,&LIN, ZD.(1995).DIAMOND GROWTH ON POROUS SILICON BY HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITION.THIN SOLID FILMS,254(1-2),3.
MLA LIU, ZH,et al."DIAMOND GROWTH ON POROUS SILICON BY HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITION".THIN SOLID FILMS 254.1-2(1995):3.

入库方式: OAI收割

来源:物理研究所

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