DIAMOND GROWTH ON THIN TI WAFERS VIA CHEMICAL-VAPOR-DEPOSITION
文献类型：期刊论文
| 作者 | CHEN, QJ ; LIN, ZD |
| 刊名 | JOURNAL OF MATERIALS RESEARCH
 |
| 出版日期 | 1995 |
| 卷号 | 10期号:11页码:2685 |
| 关键词 | BIAS-ENHANCED NUCLEATION MICROWAVE PLASMA SILICON TITANIUM OXYGEN FILMS |
| ISSN号 | 0884-2914 |
| 中文摘要 | Diamond film was synthesized on thin Ti wafers (as thin as 40 mu m) via hot filament chemical vapor deposition (HFCVD). The hydrogen embrittlement of the titanium substrate and the formation of a thick TiC interlayer were suppressed. A very low pressure (133 Pa) was employed to achieve high-density rapid nucleation and thus to suppress the formation of TiC. Oxygen was added to source gases to lower the growth temperature and therefore to slow down the hydrogenation of the thin Ti substrate. The role of the very low pressure during nucleation is discussed, providing insight into the nucleation mechanism of diamond on a titanium substrate. The as-grown diamond films were characterized by scanning electron microscopy (SEM), Raman spectroscopy, and x-ray analysis. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/35910]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | CHEN, QJ,LIN, ZD. DIAMOND GROWTH ON THIN TI WAFERS VIA CHEMICAL-VAPOR-DEPOSITION[J]. JOURNAL OF MATERIALS RESEARCH,1995,10(11):2685. |
| APA | CHEN, QJ,&LIN, ZD.(1995).DIAMOND GROWTH ON THIN TI WAFERS VIA CHEMICAL-VAPOR-DEPOSITION.JOURNAL OF MATERIALS RESEARCH,10(11),2685. |
| MLA | CHEN, QJ,et al."DIAMOND GROWTH ON THIN TI WAFERS VIA CHEMICAL-VAPOR-DEPOSITION".JOURNAL OF MATERIALS RESEARCH 10.11(1995):2685. |
入库方式： OAI收割
来源：物理研究所
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