Diamond nucleation and growth under very low-pressure conditions
文献类型：期刊论文
| 作者 | Kang, J ; Xiao, CY ; Xiong, YY ; Wang, YG ; Meng, QB ; Lin, ZD ; Feng, KA |
| 刊名 | DIAMOND AND RELATED MATERIALS
 |
| 出版日期 | 2000 |
| 卷号 | 9期号:9-10页码:1691 |
| 关键词 | CHEMICAL VAPOR-DEPOSITION BIAS-ENHANCED NUCLEATION SURFACE |
| ISSN号 | 0925-9635 |
| 通讯作者 | Kang, J: Peking Univ, Dept Phys, Beijing 100871, Peoples R China. |
| 中文摘要 | The synthesis of thin diamond films using various chemical vapor deposition methods has received significant attention in recent years due to the: unique characteristic of diamond, which make it an attractive candidate for a wide range of applications. In order to grow diamond epitaxially, the proper control of diamond nucleation on mirror-polished Si is essential. Adding the negative bias voltage to the substrate is the most popular method. This paper has proposed a new method to greatly enhance the nuclear density. Under very low pressure (1 torr), the high-density nucleation of diamond is achieved on mirror-polished silicon in a hot-filament chemical vapor deposition (HFCVD). Scanning electron microscopy has demonstrated that the nuclear density can be as high as 10(10)-10(11) cm(-2). Raman spectra of the sample have shown a dominant diamond characteristic peak at 1332 cm(-1) The pressure effect has been discussed in detail and it has been shown that the very low pressure is a very effective means to nucleate and grow diamond films on mirror-polished silicon. Extraordinary pure hydrogen (purity = 99.9999%) was used as the source. Compared with the highly pure hydrogen (purity = 99.99%), we found that the density of nucleation was greatly increased. The residual oxygen in the hydrogen displayed a very obvious negative effect on the nucleation of diamond, although it can accelerate the growth of diamond. Based on these results, it was suggested that the enhanced nucleation at very low pressure should be attributed to an increased mean free path, which induced a high density of atomic hydrogen and hydrocarbon radicals near the silicon surface. Atomic hydrogen can effectively etch the oxide layer on the surface of silicon and so greatly enhance the nucleation density. (C) 2000 Published by Elsevier Science S.A. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/35911]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Kang, J,Xiao, CY,Xiong, YY,et al. Diamond nucleation and growth under very low-pressure conditions[J]. DIAMOND AND RELATED MATERIALS,2000,9(9-10):1691. |
| APA | Kang, J.,Xiao, CY.,Xiong, YY.,Wang, YG.,Meng, QB.,...&Feng, KA.(2000).Diamond nucleation and growth under very low-pressure conditions.DIAMOND AND RELATED MATERIALS,9(9-10),1691. |
| MLA | Kang, J,et al."Diamond nucleation and growth under very low-pressure conditions".DIAMOND AND RELATED MATERIALS 9.9-10(2000):1691. |
入库方式： OAI收割
来源：物理研究所
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