Different growth behavior of Ge, Al and Sb on graphite
文献类型：期刊论文
| 作者 | Xiao, WD ; Yan, ZJ ; Kushvaha, SS ; Xu, MJ ; Wang, XS |
| 刊名 | SURFACE REVIEW AND LETTERS
 |
| 出版日期 | 2006 |
| 卷号 | 13期号:2-3页码:287 |
| 关键词 | SCANNING-TUNNELING-MICROSCOPY ORIENTED PYROLYTIC-GRAPHITE MOLECULAR-BEAM EPITAXY ANTIMONY CLUSTERS 0001 SURFACE NANOSTRUCTURES ALUMINUM SILICON FILMS GOLD |
| ISSN号 | 0218-625X |
| 通讯作者 | Wang, XS: Natl Univ Singapore, Dept Phys, 2 Sci Dr 3, Singapore 117542, Singapore. |
| 中文摘要 | Growth of Ge, Al and Sb on highly oriented pyrolytic graphite (HOPG) was systematically investigated using in situ scanning tunneling microscopy (STM). At room temperature (RT), three dimensional (3D) clusters of all three elements nucleate and grow at the step edges and defect sites of HOPG. The clusters of Al and Ge form chains, while Sb islands are mostly isolated. With further deposition at RT, Al clusters grow and coarsen into faceted islands with craters on the top (111) facets, whereas ramified single- and double-layer cluster islands are observed for Ge. When deposited or annealed at T >= 175 degrees C, Ge forms crystallites but with randomly oriented facets. As spherical Sb islands grow beyond certain size, (111) facets appear on the top. Additionally, crystalline 2D films and 1D nanorods are observed for Sb deposited at RT. At T approximate to 100 degrees C and higher flux, only the 2D and 1D Sb islands are formed. These different growth behaviors reflect the unique nature in which the atoms (molecules), clusters and crystallites of each element interact with HOPG surface and with each other. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/35944]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Xiao, WD,Yan, ZJ,Kushvaha, SS,et al. Different growth behavior of Ge, Al and Sb on graphite[J]. SURFACE REVIEW AND LETTERS,2006,13(2-3):287. |
| APA | Xiao, WD,Yan, ZJ,Kushvaha, SS,Xu, MJ,&Wang, XS.(2006).Different growth behavior of Ge, Al and Sb on graphite.SURFACE REVIEW AND LETTERS,13(2-3),287. |
| MLA | Xiao, WD,et al."Different growth behavior of Ge, Al and Sb on graphite".SURFACE REVIEW AND LETTERS 13.2-3(2006):287. |
入库方式： OAI收割
来源：物理研究所
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