中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
DIFFRACTION CHARACTERIZATION OF TOTALLY RELAXED, PARTIALLY RELAXED, AND UNRELAXED SEMICONDUCTOR STRAINED-LAYER SUPERLATTICES

文献类型:期刊论文

作者DUAN, XF ; FUNG, KK
刊名JOURNAL OF APPLIED PHYSICS
出版日期1992
卷号72期号:11页码:5240
关键词BEAM ELECTRON-DIFFRACTION X-RAY-DIFFRACTION CHEMICAL VAPOR-DEPOSITION ELASTIC RELAXATION MULTILAYERS FILMS
ISSN号0021-8979
通讯作者DUAN, XF: CHINESE ACAD SCI,BEIJING LAB ELECTRON MICROSCOPY,POB 2724,BEIJING 100080,PEOPLES R CHINA.
中文摘要Diffraction from totally relaxed, partially relaxed, and unrelaxed strained-layer superlattices is considered in the light of the similar rocking curves obtained by convergent-beam electron diffraction and x-ray diffraction. Diffraction of the superlattice can be described by an intensity expression given in terms of the strains and thicknesses of the superlattice bilayer. It is shown that the intensity profile of a reflection of a given superlattice depends on the difference of the tensile and compressive strains, i.e., the oscillating strain, of the superlattice bilayer. The oscillating strain of the superlattice bilayer, to a very good approximation, is independent of the state of strain in the step model of the superlattice. The insight gained leads to the understanding and prediction of the general form of the rocking curve of a superlattice from its growth parameters, although simulation of the rocking curve is still needed in order to obtain accurate structural parameters.
收录类别SCI
语种英语
公开日期2013-09-17
源URL[http://ir.iphy.ac.cn/handle/311004/35952]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
DUAN, XF,FUNG, KK. DIFFRACTION CHARACTERIZATION OF TOTALLY RELAXED, PARTIALLY RELAXED, AND UNRELAXED SEMICONDUCTOR STRAINED-LAYER SUPERLATTICES[J]. JOURNAL OF APPLIED PHYSICS,1992,72(11):5240.
APA DUAN, XF,&FUNG, KK.(1992).DIFFRACTION CHARACTERIZATION OF TOTALLY RELAXED, PARTIALLY RELAXED, AND UNRELAXED SEMICONDUCTOR STRAINED-LAYER SUPERLATTICES.JOURNAL OF APPLIED PHYSICS,72(11),5240.
MLA DUAN, XF,et al."DIFFRACTION CHARACTERIZATION OF TOTALLY RELAXED, PARTIALLY RELAXED, AND UNRELAXED SEMICONDUCTOR STRAINED-LAYER SUPERLATTICES".JOURNAL OF APPLIED PHYSICS 72.11(1992):5240.

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来源:物理研究所

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