中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Diode-pumped passively mode-locked Nd:GSAG laser at 942 nm

文献类型:期刊论文

作者Xu, CW ; Wei, ZY ; Zhang, YD ; Li, DH ; Zhang, ZG ; Wang, X ; Wang, S ; Eichler, HJ ; Zhang, CY ; Gao, CQ
刊名OPTICS LETTERS
出版日期2009
卷号34期号:15页码:2324
关键词ND-GSAG ND-YVO4 LASER GROWTH
ISSN号0146-9592
通讯作者Wei, ZY: Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Lab Opt Phys, Beijing 100190, Peoples R China.
中文摘要We investigate the conductivity sigma of graphene nanoribbons with zigzag edges as a function of Fermi energy E-F in the presence of the impurities with different potential range. The dependence of sigma(E-F) displays four different types of behavior, classified to different regimes of length scales decided by the impurity potential range and its density. Particularly, low density of long range impurities results in an extremely low conductance compared to the ballistic value, a linear dependence of sigma(E-F) and a wide dip near the Dirac point, due to the special properties of long range potential and edge states. These behaviors agree well with the results from a recent experiment by Miao et al. [Science 317 (2007) 1530 (SOM)]. (C) 2009 Elsevier B.V. All rights reserved.
收录类别SCI
资助信息National Basic Research Program of China [2007CB815104]; National Natural Science Foundation of China (NNSFC) [10874237, 60808007]
语种英语
公开日期2013-09-17
源URL[http://ir.iphy.ac.cn/handle/311004/35994]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Xu, CW,Wei, ZY,Zhang, YD,et al. Diode-pumped passively mode-locked Nd:GSAG laser at 942 nm[J]. OPTICS LETTERS,2009,34(15):2324.
APA Xu, CW.,Wei, ZY.,Zhang, YD.,Li, DH.,Zhang, ZG.,...&Gao, CQ.(2009).Diode-pumped passively mode-locked Nd:GSAG laser at 942 nm.OPTICS LETTERS,34(15),2324.
MLA Xu, CW,et al."Diode-pumped passively mode-locked Nd:GSAG laser at 942 nm".OPTICS LETTERS 34.15(2009):2324.

入库方式: OAI收割

来源:物理研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。