Diode-pumped passively Q-switched Yb : YAG microchip laser with a GaAs as saturable absorber
文献类型：期刊论文
| 作者 | Zhang, QL ; Feng, BH ; Zhang, DX ; Fu, PM ; Zhang, ZG ; Zhao, ZW ; Deng, PZ ; Jun, X ; Xu, XD ; Wang, YG ; Ma, XY |
| 刊名 | CHINESE PHYSICS LETTERS
 |
| 出版日期 | 2003 |
| 卷号 | 20期号:10页码:1741 |
| 关键词 | TRANSIENT ENERGY-TRANSFER |
| ISSN号 | 0256-307X |
| 通讯作者 | Zhang, QL: Chinese Acad Sci, Inst Phys, Lab Opt Phys, Beijing 100080, Peoples R China. |
| 中文摘要 | A passively Q-switched Yb: YAG microchip laser has been constructed by using a doped GaAs as the saturable absorber as well as the output coupler. At 13.5 W of pump power the device produces high-quality 3.4 muJ 52 ns pulses at 1030nm with a pulse repetition rate of 7.8kHz in a TEM00-mode. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/35999]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhang, QL,Feng, BH,Zhang, DX,et al. Diode-pumped passively Q-switched Yb : YAG microchip laser with a GaAs as saturable absorber[J]. CHINESE PHYSICS LETTERS,2003,20(10):1741. |
| APA | Zhang, QL.,Feng, BH.,Zhang, DX.,Fu, PM.,Zhang, ZG.,...&Ma, XY.(2003).Diode-pumped passively Q-switched Yb : YAG microchip laser with a GaAs as saturable absorber.CHINESE PHYSICS LETTERS,20(10),1741. |
| MLA | Zhang, QL,et al."Diode-pumped passively Q-switched Yb : YAG microchip laser with a GaAs as saturable absorber".CHINESE PHYSICS LETTERS 20.10(2003):1741. |
入库方式： OAI收割
来源：物理研究所
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