Direct photoetching of single crystal SiC by VUV 266 nm multiwavelength laser ablation
文献类型：期刊论文
| 作者 | Zhang, J ; Sugioka, K ; Wada, S ; Tashiro, H ; Toyoda, K |
| 刊名 | APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
 |
| 出版日期 | 1997 |
| 卷号 | 64期号:4页码:367 |
| 关键词 | CYCLOTRON-RESONANCE PLASMA QUARTZ |
| ISSN号 | 0947-8396 |
| 中文摘要 | Single crystal SiC substrate was successfully photoetched at a remarkably high etch rate of 35 nm/s by VUV (133, 141, 150, 160, 171 and 184 nm)-266nm multiwavelength laser ablation, combined with a chemical post-treatment in a solution of HCl : H2O2 : H2O and HF: H2O. The analysis of the etched samples by scanning electron microscopy (SEM) and scanning probe microscopy (SPM) indicates that an array of square holes having well-defined patterned structures and clean substrate surfaces were obtained. The X-ray photoelectron spectroscopy (XPS) analysis indicates that the SiC samples etched by VUV-266 nm multiwavelength laser have a similar stoichiometry after chemical post-treatment as the virgin SiC. The mechanism of high-duality ablation using VUV-266 nm multiwavelength laser is discussed in comparison with ablation using 266 nm single wavelength. The chemical post-treatment contributes to removing the residues from the laser photolysis of SiC. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/36072]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhang, J,Sugioka, K,Wada, S,et al. Direct photoetching of single crystal SiC by VUV 266 nm multiwavelength laser ablation[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,1997,64(4):367. |
| APA | Zhang, J,Sugioka, K,Wada, S,Tashiro, H,&Toyoda, K.(1997).Direct photoetching of single crystal SiC by VUV 266 nm multiwavelength laser ablation.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,64(4),367. |
| MLA | Zhang, J,et al."Direct photoetching of single crystal SiC by VUV 266 nm multiwavelength laser ablation".APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 64.4(1997):367. |
入库方式： OAI收割
来源：物理研究所
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