Dislocation Behavior in AlGaN/GaN Multiple Quantum-Well Films Grown with Different Interlayers
文献类型：期刊论文
| 作者 | Sun, HH ; Guo, FY ; Li, DY ; Wang, L ; Zhao, DG ; Zhao, LC |
| 刊名 | CHINESE PHYSICS LETTERS
 |
| 出版日期 | 2012 |
| 卷号 | 29期号:9 |
| 关键词 | INCLINED THREADING DISLOCATIONS INTERSUBBAND TRANSITIONS RELAXATION LAYERS |
| ISSN号 | 0256-307X |
| 通讯作者 | Sun, HH: Harbin Inst Technol, Dept Informat Mat Sci & Technol, Harbin 150001, Peoples R China. |
| 中文摘要 | Dislocation behaviors are analyzed in AlGaN/GaN multiple-quantum-well films grown with different strain-modified interlayers. In the case of multiple-quantum-well layers grown on a GaN buffer layer without the interlayer, many threading dislocations interact and annihilate within about 100 nm below the multiple quantum well layer. For multiple-quantum-well layers grown with the AlGaN interlayer, misfit dislocations between the GaN buffer layer and the AlGaN interlayer enter multiple-quantum-well layers and result in an increase of threading dislocation density. Besides misfit dislocations, the edge-type dislocation is another dislocation origin attributed to the dissociation of Shockley partials bounding the stacking fault in AlN/GaN superlattices below the interlayer interface. |
| 收录类别 | SCI |
| 资助信息 | Natural Science Foundation of Heilongjiang Province [F2007-1]; Open Experimentation Program of Beijing Institute of Technology [BJUT-GTS-200904] |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/36118]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Sun, HH,Guo, FY,Li, DY,et al. Dislocation Behavior in AlGaN/GaN Multiple Quantum-Well Films Grown with Different Interlayers[J]. CHINESE PHYSICS LETTERS,2012,29(9). |
| APA | Sun, HH,Guo, FY,Li, DY,Wang, L,Zhao, DG,&Zhao, LC.(2012).Dislocation Behavior in AlGaN/GaN Multiple Quantum-Well Films Grown with Different Interlayers.CHINESE PHYSICS LETTERS,29(9). |
| MLA | Sun, HH,et al."Dislocation Behavior in AlGaN/GaN Multiple Quantum-Well Films Grown with Different Interlayers".CHINESE PHYSICS LETTERS 29.9(2012). |
入库方式： OAI收割
来源：物理研究所
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