Dislocations and related traps in p-InGaAs/GaAs lattice-mismatched heterostructures
文献类型：期刊论文
| 作者 | Du, AY ; Li, MF ; Chong, TC ; Teo, KL ; Lau, WS ; Zhang, Z |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 1996 |
| 卷号 | 69期号:19页码:2849 |
| 关键词 | HETEROJUNCTION BIPOLAR-TRANSISTORS MISFIT DISLOCATIONS GAAS LAYERS RELAXATION THICKNESS ELECTRON |
| ISSN号 | 0003-6951 |
| 通讯作者 | Du, AY: NATL UNIV SINGAPORE,DEPT ELECT ENGN,CTR OPTOELECT,SINGAPORE 119260,SINGAPORE. |
| 中文摘要 | Dislocations and traps in p-InGaAs/GaAs lattice-mismatched heterostructures are investigated by cross-section transmission electron microscopy (XTEM) and deep level transient spectroscopy (DLTS). The misfit dislocations and threading dislocations observed by XTEM in different samples with different In mole fractions and different InGaAs layer thicknesses over all satisfy the Dodson-Tsao plastic flow critical layer thickness curve. By comparing the XTEM and DLTS results, we identify that the threading dislocations in bulk layers introduce three hole trap levels I-Il, H2, and H5 with DLTS activation energies of 0.32, 0.40, and 0.88 eV, respectively, and one electron trap level Fl with a DLTS activation energy of 0.54 eV. The misfit dislocations in the relaxed InGaAs/GaAs interface induce a hole trap level H4 with a DLTS activation energy of 0.67-0.73 eV. (C) 1996 American Institute of Physics. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/36121]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Du, AY,Li, MF,Chong, TC,et al. Dislocations and related traps in p-InGaAs/GaAs lattice-mismatched heterostructures[J]. APPLIED PHYSICS LETTERS,1996,69(19):2849. |
| APA | Du, AY,Li, MF,Chong, TC,Teo, KL,Lau, WS,&Zhang, Z.(1996).Dislocations and related traps in p-InGaAs/GaAs lattice-mismatched heterostructures.APPLIED PHYSICS LETTERS,69(19),2849. |
| MLA | Du, AY,et al."Dislocations and related traps in p-InGaAs/GaAs lattice-mismatched heterostructures".APPLIED PHYSICS LETTERS 69.19(1996):2849. |
入库方式： OAI收割
来源：物理研究所
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