Doping-free fabrication of carbon nanotube thin-film diodes and their photovoltaic characteristics
文献类型：期刊论文
| 作者 | Zeng, QS ; Wang, S ; Yang, LJ ; Wang, ZX ; Zhang, ZY ; Peng, LM ; Zhou, WY ; Xie, SS |
| 刊名 | NANO RESEARCH
 |
| 出版日期 | 2012 |
| 卷号 | 5期号:1页码:33 |
| 关键词 | FIELD-EFFECT TRANSISTORS BIPOLAR DIODE SOLAR-CELLS TRANSPARENT CIRCUITS GENERATION NETWORKS |
| ISSN号 | 1998-0124 |
| 通讯作者 | Wang, S: Peking Univ, Key Lab Phys & Chem Nanodevices, Dept Elect, Beijing 100871, Peoples R China. |
| 中文摘要 | Random networks of single-walled carbon nanotubes (SWCNTs) were have been grown by chemical vapor deposition on silicon wafers and used for fabricating field-effect transistors (FETs) using symmetric Pd contacts and diodes using asymmetrical Pd and Sc contacts. For a short channel FET or diode with a channel length of about 1 mu m or less, the device works in the direct transport regime, while for a longer channel device the transport mechanism changes to percolation. Detailed electronic and photovoltaic (PV) characterizations of these carbon nanotube (CNT) thin-film devices was carried out. While as-fabricated FETs exhibited typical p-type transfer characteristics, with a large current ON/OFF ratio of more than 10(4) when metallic CNTs were removed via a controlled breakdown, it was found that the threshold voltage for the devices was typically very large, of the order of about 10 V. This situation was greatly improved when the device was coated with a passivation layer of 12 nm HfO(2), which effectively moved the threshold voltages of both FET and diode back to center around zero or turned these device to their OFF states when no bias was applied on the gate. PV measurements were then made on the short channel diodes under infrared laser illumination. It was shown that under an illumination power density of 1.5 kW/cm(2), the device resulted in an open circuit voltage V (OC) = 0.21 V and a short circuit current I (SC) = 3.74 nA. Furthermore, we compared PV characteristics of CNT film diodes with different channel lengths, and found that the power transform efficiency decreased significantly when the device changed from the direct transport to the percolation regime. |
| 收录类别 | SCI |
| 资助信息 | Ministry of Science and Technology [2011CB933002, 2011CB933001, 2012CB932302]; Fundamental Research Funds for the Central Universities; National Science Foundation of China [61071013, 61001016, 51072006, 60971003, 90921012, 51172271]; Beijing Municipal Education Commission [YB20108000101] |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/36204]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zeng, QS,Wang, S,Yang, LJ,et al. Doping-free fabrication of carbon nanotube thin-film diodes and their photovoltaic characteristics[J]. NANO RESEARCH,2012,5(1):33. |
| APA | Zeng, QS.,Wang, S.,Yang, LJ.,Wang, ZX.,Zhang, ZY.,...&Xie, SS.(2012).Doping-free fabrication of carbon nanotube thin-film diodes and their photovoltaic characteristics.NANO RESEARCH,5(1),33. |
| MLA | Zeng, QS,et al."Doping-free fabrication of carbon nanotube thin-film diodes and their photovoltaic characteristics".NANO RESEARCH 5.1(2012):33. |
入库方式： OAI收割
来源：物理研究所
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