Effect of aluminum supply on aluminum-induced crystallization of amorphous silicon at low temperature
文献类型：期刊论文
| 作者 | Song, R ; Liu, YL ; Cao, ZX |
| 刊名 | PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 3
 |
| 出版日期 | 2009 |
| 卷号 | 6期号:3页码:663 |
| 关键词 | SOLID-PHASE CRYSTALLIZATION FILM SOLAR-CELLS POLYCRYSTALLINE SILICON SI FILMS GROWTH GLASS PROFILES SURFACE LAYERS AL |
| ISSN号 | 1610-1634 |
| 通讯作者 | Cao, ZX: Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, POB 603, Beijing 100190, Peoples R China. |
| 中文摘要 | Effect of aluminum supply on aluminum-induced crystallization of amorphous silicon was studied in the glass/Al/a-Si structures of different layer thicknesses prepared by using magnetron sputtering at room temperature. Various characterizing techniques have been applied to evaluate the quality of the resulting poly-Si layers, including crystallinity, integrity and doping level caused by residual Al atoms. We emphasize the fact that Al atoms driven to the outermost surface by thermodynamical reasons form, besides an overlayer, a depth profile into poly-Si, thus excessive Al supply both causes a heavy p-type doping and imperils the surface compactness in subsequent etching procedure. A critical amount of Al is nevertheless required to achieve a satisfying crystallinity of the poly-Si layer. With an M-layer over 200 nm and annealing at 500 degrees C, compact and well crystallized poly-Si layers were obtained the grain size of which is only limited by layer thickness - the fingerprint Raman peak shows a full-width-at-half-maximum as small as 3.69 cm(-1). A strategy of sufficient Al supply in conjunction with annealing and short-time etching twice is found very effective. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/36343]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Song, R,Liu, YL,Cao, ZX. Effect of aluminum supply on aluminum-induced crystallization of amorphous silicon at low temperature[J]. PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 3,2009,6(3):663. |
| APA | Song, R,Liu, YL,&Cao, ZX.(2009).Effect of aluminum supply on aluminum-induced crystallization of amorphous silicon at low temperature.PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 3,6(3),663. |
| MLA | Song, R,et al."Effect of aluminum supply on aluminum-induced crystallization of amorphous silicon at low temperature".PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 3 6.3(2009):663. |
入库方式： OAI收割
来源：物理研究所
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