中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Effect of annealing on the microstructure of Ni80Fe20/Cu multilayers

文献类型:期刊论文

作者Xu, M ; Luo, GM ; Chai, CL ; Mai, ZH ; Lai, WY ; Wu, ZH ; Wang, DW
刊名JOURNAL OF CRYSTAL GROWTH
出版日期2000
卷号212期号:1-2页码:291
关键词NI-FE/CU MULTILAYERS X-RAY-DIFFRACTION GIANT MAGNETORESISTANCE MAGNETIC MULTILAYERS CO/CU MULTILAYERS SUPERLATTICES THICKNESS LAYER
ISSN号0022-0248
通讯作者Xu, M: Chinese Acad Sci, Inst Phys, POB 603-79, Beijing 100080, Peoples R China.
中文摘要[Ni80Fe20/Cu](15) multilayers grown by DC-magnetron sputtering and annealed at different temperatures and/or times were investigated by low- and high-angle X-ray diffraction. Structural parameters such as superlattice period, interplane distance, average multilayer coherence length and interfacial roughness were obtained. It was found that as the annealing temperature increases the superlattice period, interplane distance, average multilayer coherence length decrease, while (1 1 1) preferred orientation of the superlattices was improved slightly. The interfacial roughness increases with increasing annealing temperature and/or time. A significant intermixing layer located in the interlayer region between the Ni80Fe20 and Cu layers was revealed by simulating the high-angle X-ray diffraction profiles. The thickness of the intermixing layer increases as the annealing temperature or annealing time increases. (C) 2000 Elsevier Science B.V. All rights reserved.
收录类别SCI
语种英语
公开日期2013-09-17
源URL[http://ir.iphy.ac.cn/handle/311004/36356]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Xu, M,Luo, GM,Chai, CL,et al. Effect of annealing on the microstructure of Ni80Fe20/Cu multilayers[J]. JOURNAL OF CRYSTAL GROWTH,2000,212(1-2):291.
APA Xu, M.,Luo, GM.,Chai, CL.,Mai, ZH.,Lai, WY.,...&Wang, DW.(2000).Effect of annealing on the microstructure of Ni80Fe20/Cu multilayers.JOURNAL OF CRYSTAL GROWTH,212(1-2),291.
MLA Xu, M,et al."Effect of annealing on the microstructure of Ni80Fe20/Cu multilayers".JOURNAL OF CRYSTAL GROWTH 212.1-2(2000):291.

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来源:物理研究所

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