Effect of bandgap engineering on the performance and reliability of a high-k based nanoscale charge trap flash memory
文献类型：期刊论文
| 作者 | Zhu, CX ; Xu, ZG ; Huo, ZL ; Zheng, ZW ; Cui, YX ; Wang, YM ; Liu, J ; Li, FH ; Liu, M |
| 刊名 | JOURNAL OF PHYSICS D-APPLIED PHYSICS
 |
| 出版日期 | 2012 |
| 卷号 | 45期号:6 |
| 关键词 | LAYER |
| ISSN号 | 0022-3727 |
| 通讯作者 | Zhu, CX: Chinese Acad Sci, Inst Microelect, Lab Nanofabricat & Novel Devices Integrated Techn, Beijing 100029, Peoples R China. |
| 中文摘要 | This paper investigates the performance of a bandgap engineered charge trapping structure consisting of HfO2/Al2O3/HfO2 (HAH) multilayer in comparison with a structure with a single HfO2 trapping layer. The study on the role of the inserted Al2O3 layer in improving the performance and reliability shows that the enhancement in charge trapping capability from the interfaces makes a considerable contribution to the larger memory window (7.8V for the HAH 5/2/5 nm device and 3V for the single HfO2 layer device, both under 12V, 0.1 s program condition). The modulation of trapped charge distribution is proved by investigating the effect of varying the inserted Al2O3 layer position on program/erase (P/E) speed and retention characteristics, which is a crucial factor in improving the performance and reliability. This study can provide a guide for future designs of charge trap flash memories. |
| 收录类别 | SCI |
| 资助信息 | MOST [2010CB934200, 2011CBA00600]; National Natural Science Foundation of China [60825403, 61176073]; National Science and Technology Major Project of China [2009ZX02023-005]; IMECAS |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/36364]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhu, CX,Xu, ZG,Huo, ZL,et al. Effect of bandgap engineering on the performance and reliability of a high-k based nanoscale charge trap flash memory[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2012,45(6). |
| APA | Zhu, CX.,Xu, ZG.,Huo, ZL.,Zheng, ZW.,Cui, YX.,...&Liu, M.(2012).Effect of bandgap engineering on the performance and reliability of a high-k based nanoscale charge trap flash memory.JOURNAL OF PHYSICS D-APPLIED PHYSICS,45(6). |
| MLA | Zhu, CX,et al."Effect of bandgap engineering on the performance and reliability of a high-k based nanoscale charge trap flash memory".JOURNAL OF PHYSICS D-APPLIED PHYSICS 45.6(2012). |
入库方式： OAI收割
来源：物理研究所
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