Effect of film thickness on interfacial barrier of manganite-based heterojunctions
文献类型：期刊论文
| 作者 | Xie, YW ; Guo, DF ; Sun, JR ; Shen, BG |
| 刊名 | CHINESE PHYSICS B
 |
| 出版日期 | 2010 |
| 卷号 | 19期号:11 |
| 关键词 | TEMPERATURE JUNCTIONS |
| ISSN号 | 1674-1056 |
| 通讯作者 | Xie, YW: Yanshan Univ, State Key Lab Metastable Mat Sci & Technol, Qinhuangdao 066004, Peoples R China. |
| 中文摘要 | Interfacial barrier is a key factor that determines the performances of heterojunctions In this work, we study the effect of manganite film thickness on the effective interfacial barrier for La-0 Sr-67(0) 33MnO3/Nb SrTiO3 junctions The barrier is extracted from the forward current-voltage characteristics Our results demonstrate that the barrier decreases gradually from similar to 0 85 eV to similar to 0 60 eV when the film thickness decreases from 150 nm to 2 nm The overall value of the barrier is only about 50% of the corresponding one determined from the photovoltaic effect |
| 收录类别 | SCI |
| 资助信息 | National Natural Science Foundation of China [10804094, 50832007, 50721001, 50821001]; Natural Science Foundation of Hebei Province, China [A2009000339] |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/36428]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Xie, YW,Guo, DF,Sun, JR,et al. Effect of film thickness on interfacial barrier of manganite-based heterojunctions[J]. CHINESE PHYSICS B,2010,19(11). |
| APA | Xie, YW,Guo, DF,Sun, JR,&Shen, BG.(2010).Effect of film thickness on interfacial barrier of manganite-based heterojunctions.CHINESE PHYSICS B,19(11). |
| MLA | Xie, YW,et al."Effect of film thickness on interfacial barrier of manganite-based heterojunctions".CHINESE PHYSICS B 19.11(2010). |
入库方式： OAI收割
来源：物理研究所
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