Effect of GaAs/GaSb combination strain-reducing layer on self-assembled InAs quantum dots
文献类型：期刊论文
| 作者 | Jiang, ZW ; Wang, WX ; Gao, HC ; Li, H ; Yang, CL ; He, T ; Wu, DZ ; Chen, H ; Zhou, JM |
| 刊名 | CHINESE PHYSICS LETTERS
 |
| 出版日期 | 2008 |
| 卷号 | 25期号:7页码:2649 |
| 关键词 | NARROW PHOTOLUMINESCENCE LINEWIDTH CHEMICAL-VAPOR-DEPOSITION MOLECULAR-BEAM EPITAXY GROWTH INTERRUPTION MU-M PRESSURE DENSITY REGION SB |
| ISSN号 | 0256-307X |
| 通讯作者 | Jiang, ZW: Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China. |
| 中文摘要 | Self-assembled quantum dots capping with a GaAs/Garb combined strain-reduced layer (CSRL) are grown by MBE. Their structural and optical properties are investigated by AFM and photoluminescence (PL). PL measurements have shown that stronger emission about 1.3 mu m can be obtained by Sb irradiation and capping QDs with 3 ML GaAs/2 ML GaSb CSRL at room temperature. The full width at half maximum (FWHM) of the PL spectrum is about 20.2 meV (19.9 me V) at room temperature (20K), indicating that the QDs have high uniform, The result of FWHM is much better than the recently reported result, which is due to the fact that lower QD growth rate and growth interruption after the QDs deposition are adopted in our experiments. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/36434]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Jiang, ZW,Wang, WX,Gao, HC,et al. Effect of GaAs/GaSb combination strain-reducing layer on self-assembled InAs quantum dots[J]. CHINESE PHYSICS LETTERS,2008,25(7):2649. |
| APA | Jiang, ZW.,Wang, WX.,Gao, HC.,Li, H.,Yang, CL.,...&Zhou, JM.(2008).Effect of GaAs/GaSb combination strain-reducing layer on self-assembled InAs quantum dots.CHINESE PHYSICS LETTERS,25(7),2649. |
| MLA | Jiang, ZW,et al."Effect of GaAs/GaSb combination strain-reducing layer on self-assembled InAs quantum dots".CHINESE PHYSICS LETTERS 25.7(2008):2649. |
入库方式： OAI收割
来源：物理研究所
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