Effect of growth temperature on morphology, structure and luminescence of Eu-doped GaN thin films
文献类型：期刊论文
| 作者 | Liu, QL ; Bando, Y ; Xu, FF ; Tang, CC |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2004 |
| 卷号 | 85期号:21页码:4890 |
| 关键词 | VISIBLE EMISSION PHOTOLUMINESCENCE ELECTROLUMINESCENCE TB TM CATHODOLUMINESCENCE NITRIDE ER |
| ISSN号 | 0003-6951 |
| 通讯作者 | Liu, QL: Natl Inst Mat Sci, Adv Mat Lab, Namiki 1-1, Tsukuba, Ibaraki 3050044, Japan. |
| 中文摘要 | The effect of growth temperature on morphology, structure, and photoluminescence (PL) of Eu-doped GaN (GaN:Eu) films grown by magnetron sputtering, and the relationships of growth-temperature-structure-PL were investigated by x-ray diffraction, scanning electron microscopy, transmission electron microscopy, and PL. The films grown at room temperature (RT), 573 K, and 773 K are composed of random crystalline grains, c-oriented GaN nanorods with lots of stacking faults, and well-crystalline c-oriented GaN, respectively. The characteristic emission lines of the Eu3+ were observed in the PL spectra at room temperature for the 573-K-grown and 773-K-grown films, while no emission line for the RT-grown film. The PL intensity from the 773-K-grown film is much stronger than that from the 573-K-grown film. (C) 2004 American Institute of Physics. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/36444]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Liu, QL,Bando, Y,Xu, FF,et al. Effect of growth temperature on morphology, structure and luminescence of Eu-doped GaN thin films[J]. APPLIED PHYSICS LETTERS,2004,85(21):4890. |
| APA | Liu, QL,Bando, Y,Xu, FF,&Tang, CC.(2004).Effect of growth temperature on morphology, structure and luminescence of Eu-doped GaN thin films.APPLIED PHYSICS LETTERS,85(21),4890. |
| MLA | Liu, QL,et al."Effect of growth temperature on morphology, structure and luminescence of Eu-doped GaN thin films".APPLIED PHYSICS LETTERS 85.21(2004):4890. |
入库方式： OAI收割
来源：物理研究所
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