Effect of misfit dislocation originated from strained layer on photoluminescence properties of InxGa1-xN/GaN multiple quantum wells
文献类型：期刊论文
| 作者 | Lu, W ; Li, DB ; Li, CR ; Chen, G ; Zhang, Z |
| 刊名 | CHINESE PHYSICS LETTERS
 |
| 出版日期 | 2005 |
| 卷号 | 22期号:4页码:971 |
| 关键词 | OPTICAL-PROPERTIES RAMAN-SCATTERING SHIFT SEMICONDUCTORS LUMINESCENCE DEPENDENCE EMISSION FILMS DOTS BLUE |
| ISSN号 | 0256-307X |
| 通讯作者 | Lu, W: Jilin Univ, Coll Mat Sci & Engn, Dept Mat Sci, Changchun 130012, Peoples R China. |
| 中文摘要 | In-x Ga1-xN/GaN multiple quantum well (MQW) samples with strain-layer thickness lager/less than the critical one are investigated by temperature-dependent photoluminescence and transmission electron microscopy, and double crystal x-ray diffraction. For the sample with the strained-layer thickness greater than the critical thickness, we observe a high density of threading dislocations generated at the MQW layers and extended to the cap layer. These dislocations result from relaxation of the strain layer when its thickness is beyond the critical thickness. For the sample with the strained-layer thickness greater than the critical thickness, temperature-dependent photoluminescence measurements give evidence that dislocations generated from the MQW layers due to strain relaxation are main reason of the poor photoluminescence property, and the dominating status change of the main peak with increasing temperature is attributed to the change of the radiative recombination from the areas including dislocations to the ones excluding dislocations. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/36493]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Lu, W,Li, DB,Li, CR,et al. Effect of misfit dislocation originated from strained layer on photoluminescence properties of InxGa1-xN/GaN multiple quantum wells[J]. CHINESE PHYSICS LETTERS,2005,22(4):971. |
| APA | Lu, W,Li, DB,Li, CR,Chen, G,&Zhang, Z.(2005).Effect of misfit dislocation originated from strained layer on photoluminescence properties of InxGa1-xN/GaN multiple quantum wells.CHINESE PHYSICS LETTERS,22(4),971. |
| MLA | Lu, W,et al."Effect of misfit dislocation originated from strained layer on photoluminescence properties of InxGa1-xN/GaN multiple quantum wells".CHINESE PHYSICS LETTERS 22.4(2005):971. |
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来源：物理研究所
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