Effect of nitridation on the growth of GaN on ZrB2 (0001)/Si(111) by molecular-beam epitaxy
文献类型：期刊论文
| 作者 | Wang, ZT ; Yamada-Takamura, Y ; Fujikawa, Y ; Sakurai, T ; Xue, QK ; Tolle, J ; Kouvetakis, J ; Tsong, IST |
| 刊名 | JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 2006 |
| 卷号 | 100期号:3 |
| 关键词 | VAPOR-PHASE EPITAXY GROUP-III NITRIDES BUFFER LAYER SUBSTRATE ZRB2(0001) SI(111) SURFACE |
| ISSN号 | 0021-8979 |
| 通讯作者 | Wang, ZT: Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan. |
| 中文摘要 | The effect of nitridation on the epitaxial growth of GaN on lattice-matched ZrB2 ( 0001 ) films prepared ex situ and in situ was studied using an ultrahigh-vacuum molecular-beam epitaxy ( MBE )-scanning probe microscopy system. The growth of GaN was carried out by rf-plasma-assisted MBE, and epitaxy of wurtzite GaN was observed on both ex situ and in situ prepared ZrB2 samples. The polarity was found to be consistently N-polar regardless of the samples, based on the observation of a series of N-polar Ga-rich reconstructions: ( 3 x 3 ), ( 6 x 6 ), and c( 6 x 12 ). The nitridation of ZrB2 film was conducted by exposing it to active nitrogen and well-ordered hexagonal-BN ( h-BN ) formation was observed when the annealing temperature was above 900 degrees C. The partially formed BN layer affected neither the epitaxy nor the polarity of GaN, but when the surface was fully covered with well-ordered h-BN, GaN growth did not occur. (c) 2006 American Institute of Physics. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/36502]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang, ZT,Yamada-Takamura, Y,Fujikawa, Y,et al. Effect of nitridation on the growth of GaN on ZrB2 (0001)/Si(111) by molecular-beam epitaxy[J]. JOURNAL OF APPLIED PHYSICS,2006,100(3). |
| APA | Wang, ZT.,Yamada-Takamura, Y.,Fujikawa, Y.,Sakurai, T.,Xue, QK.,...&Tsong, IST.(2006).Effect of nitridation on the growth of GaN on ZrB2 (0001)/Si(111) by molecular-beam epitaxy.JOURNAL OF APPLIED PHYSICS,100(3). |
| MLA | Wang, ZT,et al."Effect of nitridation on the growth of GaN on ZrB2 (0001)/Si(111) by molecular-beam epitaxy".JOURNAL OF APPLIED PHYSICS 100.3(2006). |
入库方式： OAI收割
来源：物理研究所
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