Effect of rapid thermal annealing and hydrogen plasma treatment on the microstructure and light-emission of silicon-rich oxide film
文献类型：期刊论文
| 作者 | Wang, YQ ; Chen, WD ; Chen, CY ; Diao, HW ; Zhang, SB ; Xu, YY ; Kong, GL ; Liao, XB |
| 刊名 | ACTA PHYSICA SINICA
 |
| 出版日期 | 2002 |
| 卷号 | 51期号:7页码:1564 |
| 关键词 | CHEMICAL-VAPOR-DEPOSITION AMORPHOUS-SILICON POROUS SILICON SI LUMINESCENCE NANOCRYSTALS SPECTRA SYSTEM |
| ISSN号 | 1000-3290 |
| 通讯作者 | Wang, YQ: Chinese Acad Sci, Inst Semicond, State Key Lab Surface Phys, Beijing 100083, Peoples R China. |
| 中文摘要 | Silicon-rich silicon oxide (SRSO) films are prepared by plasma-enhanced chemical vapor deposition method at the substrate temperature of 200degreesC. The effect of rapid thermal annealing and hydrogen plasma treatment on tire microstructure and light-emission of SRSO films are investigated in detail using micro-Raman spectroscopy, Fourier transform infrared (FTIR) spectroscopy and photoluminescence (PL) spectra. It is found that the phase-separation degree of the films decreases with increasing annealing temperature from 300 to 600degreesC, while it increases with increasing annealing temperature from 600 to 900degreesC. The light-emission of the films are enhanced with increasing annealing temperature up to 500degreesC, while it is rapidly reduced when the annealing temperature exceeds 600degreesC. The peak position of the PL spectrum blueshifts by annealing at the temperature of 300degreesC, then it red-shifts with further raising annealing temperature. The following hydrogen plasma treatment results in a disproportionate increase of the PL intensity and a blueshift or redshift of the peak positions, depending on the pristine annealing temperature. It is thought that the size of amorphous silicon clusters, surface structure of the clusters and the distribution of hydrogen in the films can be changed during the annealing procedure. The results indicate that not only cluster size but also surface state of the clusters plays an important role in the determination of electronic structure of the amorphous silicon cluster and recombination process of light-generated carriers. |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/36548]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang, YQ,Chen, WD,Chen, CY,et al. Effect of rapid thermal annealing and hydrogen plasma treatment on the microstructure and light-emission of silicon-rich oxide film[J]. ACTA PHYSICA SINICA,2002,51(7):1564. |
| APA | Wang, YQ.,Chen, WD.,Chen, CY.,Diao, HW.,Zhang, SB.,...&Liao, XB.(2002).Effect of rapid thermal annealing and hydrogen plasma treatment on the microstructure and light-emission of silicon-rich oxide film.ACTA PHYSICA SINICA,51(7),1564. |
| MLA | Wang, YQ,et al."Effect of rapid thermal annealing and hydrogen plasma treatment on the microstructure and light-emission of silicon-rich oxide film".ACTA PHYSICA SINICA 51.7(2002):1564. |
入库方式： OAI收割
来源：物理研究所
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