Effect of reaction temperature and time on the structural properties of Cu(In,Ga)Se-2 thin films deposited by sequential elemental layer technique
文献类型：期刊论文
| 作者 | Rjaz, S ; Naseem, S |
| 刊名 | JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
 |
| 出版日期 | 2007 |
| 卷号 | 23期号:4页码:499 |
| ISSN号 | 1005-0302 |
| 中文摘要 | Thin films of copper indium gallium selenide Cu(In,Ga)Se-2 (CIGS) were prepared by sequential elemental layer deposition in vacuum at room temperature. The as-deposited films were heated in vacuum for compound formation, and were studied at temperature as high as 1250 degrees C for the first time. These films were concurrently studied for their structural properties by X-ray diffraction (XRD) technique. The XRD analyses include phase transition studies, grain size variation and microstrain measurements with the reaction temperature and time. It has been observed that there are three distinct regions of variation in all these parameters. These regions belong to three temperature regimes: < 450 degrees C, 450-9500 degrees C, and > 950 degrees C. It is also seen that the compound formation starts at 250 degrees C, with ternary phases appearing at 350 degrees C or above. Whereas, there is another phase shift at 950 degrees C without any preference to the quaternary compound. |
| 收录类别 | SCI |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/36550]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Rjaz, S,Naseem, S. Effect of reaction temperature and time on the structural properties of Cu(In,Ga)Se-2 thin films deposited by sequential elemental layer technique[J]. JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,2007,23(4):499. |
| APA | Rjaz, S,&Naseem, S.(2007).Effect of reaction temperature and time on the structural properties of Cu(In,Ga)Se-2 thin films deposited by sequential elemental layer technique.JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,23(4),499. |
| MLA | Rjaz, S,et al."Effect of reaction temperature and time on the structural properties of Cu(In,Ga)Se-2 thin films deposited by sequential elemental layer technique".JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY 23.4(2007):499. |
入库方式： OAI收割
来源：物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。