Effect of sapphire substrate nitridation on the elimination of rotation domains in ZnO epitaxial films
文献类型:期刊论文
作者 | Ying, MJ ; Du, XL ; Mei, ZX ; Zeng, ZQ ; Zheng, H ; Wang, Y ; Jia, JF ; Zhang, Z ; Xue, QK |
刊名 | JOURNAL OF PHYSICS D-APPLIED PHYSICS
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出版日期 | 2004 |
卷号 | 37期号:21页码:3058 |
关键词 | ALPHA-AL2O3(0001) SURFACE BUFFER LAYER GROWTH GAN TERMINATION |
ISSN号 | 0022-3727 |
通讯作者 | Du, XL: Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100080, Peoples R China. |
中文摘要 | The rotation domain structures in ZnO films grown on sapphire substrates under different pre-treatment conditions have been investigated by in situ reflection high-energy electron diffraction and ex situ x-ray diffraction (XRD). It was found that by appropriate nitridation treatment, forming a thin AlN film on the substrate, the rotation domains in ZnO films could be completely suppressed, and a full width at half maximum of only 180 arcsec was observed in the (0 0 0 2) reflection of XRD rocking curves. The mechanisms for the elimination of rotation domains in the ZnO films are discussed. |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2013-09-17 |
源URL | [http://ir.iphy.ac.cn/handle/311004/36553] ![]() |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Ying, MJ,Du, XL,Mei, ZX,et al. Effect of sapphire substrate nitridation on the elimination of rotation domains in ZnO epitaxial films[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2004,37(21):3058. |
APA | Ying, MJ.,Du, XL.,Mei, ZX.,Zeng, ZQ.,Zheng, H.,...&Xue, QK.(2004).Effect of sapphire substrate nitridation on the elimination of rotation domains in ZnO epitaxial films.JOURNAL OF PHYSICS D-APPLIED PHYSICS,37(21),3058. |
MLA | Ying, MJ,et al."Effect of sapphire substrate nitridation on the elimination of rotation domains in ZnO epitaxial films".JOURNAL OF PHYSICS D-APPLIED PHYSICS 37.21(2004):3058. |
入库方式: OAI收割
来源:物理研究所
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