Effect of silicon impurity on carbon nitride films prepared by microwave plasma chemical vapor deposition
文献类型：期刊论文
| 作者 | Zhang, YP ; Gu, YS |
| 刊名 | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
 |
| 出版日期 | 2001 |
| 卷号 | 85期号:1页码:38 |
| 关键词 | CRYSTALLINE C3N4 SOLIDS MPCVD |
| ISSN号 | 0921-5107 |
| 通讯作者 | Zhang, YP: Chinese Acad Sci, Inst Phys, Beijing Lab Vacuum Phys, POB 2724, Beijing 100080, Peoples R China. |
| 中文摘要 | Carbon nitride thin films have been synthesized on polycrystalline Pt substrates using microwave plasma chemical vapor deposition (MPCVD) technique. The effect of Si on the composition and structure of carbon nitride films was investigated using scanning electron microscopy (SEM), energy dispersive X-ray (EDX) analysis. X-ray diffraction (XRD) patterns, Fourier transform infrared (FTIR) and Raman spectra. Small amounts of Si can increase the [N]/([C] + [Si]) atomic ratio and promote the crystallization of carbon nitride films. The N/([C] + [Si]) atomic ratio of carbon nitride film containing 5.52% Si can reach 1.35 which, is close to the stoichiometric value 1.33 of C3N4. The experimental XRD pattern contains all the strong peaks of alpha -C3N4 and beta -C3N4. The films are mixtures of alpha -C3N4 and beta -C3N4. The observed Raman and FT-IR spectra support the existence of C-N covalent bond in carbon nitride compound. (C) 2001 Elsevier Science B.V. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/36558]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhang, YP,Gu, YS. Effect of silicon impurity on carbon nitride films prepared by microwave plasma chemical vapor deposition[J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,2001,85(1):38. |
| APA | Zhang, YP,&Gu, YS.(2001).Effect of silicon impurity on carbon nitride films prepared by microwave plasma chemical vapor deposition.MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,85(1),38. |
| MLA | Zhang, YP,et al."Effect of silicon impurity on carbon nitride films prepared by microwave plasma chemical vapor deposition".MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 85.1(2001):38. |
入库方式： OAI收割
来源：物理研究所
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