Effect of substrate bias on microstructures of zirconia thin films deposited by cathodic vacuum arc
文献类型:期刊论文
作者 | Li, XZ ; Zhang, XH ; He, P ; Niu, EW ; Xia, YY ; Huang, J ; Feng, KC ; Yang, SZ |
刊名 | CHINESE PHYSICS LETTERS
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出版日期 | 2007 |
卷号 | 24期号:6页码:1633 |
ISSN号 | 0256-307X |
中文摘要 | Zirconium oxide (ZrO2) thin films are deposited at room temperature by cathodic arc at substrate biases of 0 V, -60 V and -120 V, respectively. The crystal structure, composition, morphology, and deposition rate of the as-deposited thin Elms are systematically investigated by x-ray diffraction, x-ray photoelectron spectroscopy (XPS) as well as scanning electron microscopy. The results show that the crystal structure, morphology and deposition rate of the films all are dependant on substrate bias. With the increase of bias voltage from 0 V to -120 V, the zirconium oxide thin Elm grown on silicon wafer first exhibits monoclinic lattice and tetragonal lattice, further evolves monoclinic phase with the preferred orientation along the (-111) and (-222) directions at -60 V and finally along nearly one observed preferred (002) direction under -120 V. In addition, the variations of morphology with bias voltage are correlated to changes of the film structure. The results of XPS demonstrate that Zr elements are almost oxidized completely in the films achieved under -120 V bias. |
收录类别 | SCI |
公开日期 | 2013-09-17 |
源URL | [http://ir.iphy.ac.cn/handle/311004/36575] ![]() |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Li, XZ,Zhang, XH,He, P,et al. Effect of substrate bias on microstructures of zirconia thin films deposited by cathodic vacuum arc[J]. CHINESE PHYSICS LETTERS,2007,24(6):1633. |
APA | Li, XZ.,Zhang, XH.,He, P.,Niu, EW.,Xia, YY.,...&Yang, SZ.(2007).Effect of substrate bias on microstructures of zirconia thin films deposited by cathodic vacuum arc.CHINESE PHYSICS LETTERS,24(6),1633. |
MLA | Li, XZ,et al."Effect of substrate bias on microstructures of zirconia thin films deposited by cathodic vacuum arc".CHINESE PHYSICS LETTERS 24.6(2007):1633. |
入库方式: OAI收割
来源:物理研究所
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