Effect of the charge distribution at the interface on the properties of PZT/SiO2/Si heterostructure
文献类型：期刊论文
| 作者 | Lin, Y ; Gong, WZ ; Cai, C ; Hao, Z ; Xu, B ; Zhao, BR |
| 刊名 | FERROELECTRICS
 |
| 出版日期 | 2001 |
| 卷号 | 252期号:1-4页码:533 |
| 关键词 | FIELD-EFFECT TRANSISTOR SIO2 BUFFER LAYER |
| ISSN号 | 0015-0193 |
| 通讯作者 | Lin, Y: Chinese Acad Sci, Inst Phys, Natl Lab Superconduct, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | Asymmetry related to the conduction type of the Si substrate and polarization direction of PZT were found in the polarization-voltage (P-V) loops, capacitance voltage (C-V) curves and resistance of the integrated system. According to the configuration and the characteristic of the integrated structure, we suggest that the space-charge layer in Si and the tunneling process between Si and PZT during the polarization are the main causes for this asymmetry. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/36592]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Lin, Y,Gong, WZ,Cai, C,et al. Effect of the charge distribution at the interface on the properties of PZT/SiO2/Si heterostructure[J]. FERROELECTRICS,2001,252(1-4):533. |
| APA | Lin, Y,Gong, WZ,Cai, C,Hao, Z,Xu, B,&Zhao, BR.(2001).Effect of the charge distribution at the interface on the properties of PZT/SiO2/Si heterostructure.FERROELECTRICS,252(1-4),533. |
| MLA | Lin, Y,et al."Effect of the charge distribution at the interface on the properties of PZT/SiO2/Si heterostructure".FERROELECTRICS 252.1-4(2001):533. |
入库方式： OAI收割
来源：物理研究所
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