Effect of the GaAs/GaSb combination strain-buffer layer on self-assembled InAs quantum dots
文献类型：期刊论文
| 作者 | Jiang, ZW ; Wang, WX ; Gao, HC ; Li, H ; He, T ; Yang, CL ; Chen, H ; Zhou, JM |
| 刊名 | ACTA PHYSICA SINICA
 |
| 出版日期 | 2009 |
| 卷号 | 58期号:1页码:471 |
| 关键词 | MOLECULAR-BEAM EPITAXY 1.3 MU-M GAAS ISLANDS GROWTH |
| ISSN号 | 1000-3290 |
| 通讯作者 | Wang, WX: Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China. |
| 中文摘要 | Optical properties and surface structures of InAs/GaAs serf-assembled QDs grown on 2 ML GaSb and x-ML GaAs combined strain-buffer layer are investigated systematically by photoluminescence (PL) and atomic force microscopy (AFM). The QD density varies from 1.2 x 10 cm(-2) to 8.0 x 10 cm(-2) due to the influence of the lattice mismatch. The combined layer favors the increasing of In incorporated into dots and the average height-to-width ratio, which resulted in the red-shift of the emission peaks. For the sample of 5 ML GaAs thin film the ground state transition is shifted to nearly 1300 nm at room temperature. |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/36601]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Jiang, ZW,Wang, WX,Gao, HC,et al. Effect of the GaAs/GaSb combination strain-buffer layer on self-assembled InAs quantum dots[J]. ACTA PHYSICA SINICA,2009,58(1):471. |
| APA | Jiang, ZW.,Wang, WX.,Gao, HC.,Li, H.,He, T.,...&Zhou, JM.(2009).Effect of the GaAs/GaSb combination strain-buffer layer on self-assembled InAs quantum dots.ACTA PHYSICA SINICA,58(1),471. |
| MLA | Jiang, ZW,et al."Effect of the GaAs/GaSb combination strain-buffer layer on self-assembled InAs quantum dots".ACTA PHYSICA SINICA 58.1(2009):471. |
入库方式： OAI收割
来源：物理研究所
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