Effect of the low-temperature buffer thickness on quality of InSb grown on GaAs substrate by molecular beam epitaxy
文献类型：期刊论文
| 作者 | Wu, SD ; Guo, LW ; Li, ZH ; Shang, XZ ; Wang, W ; Huang, Q ; Zhou, JM |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 2005 |
| 卷号 | 277期号:1-4页码:21 |
| ISSN号 | 0022-0248 |
| 关键词 | X-RAY-DIFFRACTION LATTICE-DYNAMICS LAYER THICKNESS FILMS |
| 通讯作者 | Wu, SD: Chinese Acad Sci, Inst Phys, State Key Lab Surface Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | The effect of initial low-temperature grown buffer (LT buffer) layer thickness on quality of InSb grown on GaAs substrate by molecular beam epitaxy (MBE) with the two-step growth method was investigated. The characteristics of InSb layers were analyzed by using Raman scattering, triple-axis crystal X-ray diffraction (XRD) and atomic force microscopy (AFM). It is shown that the crystalline quality and the root-mean-square (RMS) roughness of the InSb layer have close relation to the thickness of initial grown low-temperature buffer layer. With the spatial correlation model, the Raman line shapes of the first-order longitudinal optical phonon mode of InSb epilayer have been analyzed, which well agrees with the experimental results. We found that the optimal LT buffer thickness is about 30 run suitable for obtaining smooth surface and high-quality InSb epilayer grown on semi-insulated GaAs substrate. (c) 2005 Elsevier B.V. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/36606]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wu, SD,Guo, LW,Li, ZH,et al. Effect of the low-temperature buffer thickness on quality of InSb grown on GaAs substrate by molecular beam epitaxy[J]. JOURNAL OF CRYSTAL GROWTH,2005,277(1-4):21. |
| APA | Wu, SD.,Guo, LW.,Li, ZH.,Shang, XZ.,Wang, W.,...&Zhou, JM.(2005).Effect of the low-temperature buffer thickness on quality of InSb grown on GaAs substrate by molecular beam epitaxy.JOURNAL OF CRYSTAL GROWTH,277(1-4),21. |
| MLA | Wu, SD,et al."Effect of the low-temperature buffer thickness on quality of InSb grown on GaAs substrate by molecular beam epitaxy".JOURNAL OF CRYSTAL GROWTH 277.1-4(2005):21. |
入库方式： OAI收割
来源：物理研究所
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