中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Effect of thermal annealing on optical emission properties of low-temperature grown AlGaAs/GaAs multiple quantum wells

文献类型:期刊论文

作者Feng, W ; Chen, F ; Wang, WX ; Cheng, WQ ; Yu, Y ; Huang, Q ; Zhou, JM
刊名APPLIED PHYSICS LETTERS
出版日期1996
卷号69期号:23页码:3513
关键词MOLECULAR-BEAM EPITAXY CARRIER LIFETIME GAAS 200-DEGREES-C
ISSN号0003-6951
通讯作者Feng, W: CHINESE ACAD SCI,INST PHYS,POB 603 36,BEIJING 100080,PEOPLES R CHINA.
中文摘要We have investigated the effect of thermal annealing on optical emission properties of low-temperature (LT) grown AlGaAs/GaAs multiple quantum wells (MQWs) by using photoluminescence (PL) spectroscopy. For comparison, the results on normal-temperature (NT) grown MQWs implanted with protons are also presented. The LT sample was grown by molecular beam epitaxy at 310 degrees C. The as-grown LT-MQWs show moderately strong FL. Upon annealing at 600 degrees C, the PL intensity of the LT-MQWs is dramatically quenched, in sharp contrast to the large increase in PL intensity of the implanted NT-MQWs. The quenching of PL intensity in the LT-MQWs is attributed to the formation of arsenic clusters that fast trap photoexcited carriers. In addition, an enhancement in the interface intermixing and roughening induced by thermal annealing has also been observed in the LT-MQWs. (C) 1996 American Institute of Physics.
收录类别SCI
语种英语
公开日期2013-09-17
源URL[http://ir.iphy.ac.cn/handle/311004/36619]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Feng, W,Chen, F,Wang, WX,et al. Effect of thermal annealing on optical emission properties of low-temperature grown AlGaAs/GaAs multiple quantum wells[J]. APPLIED PHYSICS LETTERS,1996,69(23):3513.
APA Feng, W.,Chen, F.,Wang, WX.,Cheng, WQ.,Yu, Y.,...&Zhou, JM.(1996).Effect of thermal annealing on optical emission properties of low-temperature grown AlGaAs/GaAs multiple quantum wells.APPLIED PHYSICS LETTERS,69(23),3513.
MLA Feng, W,et al."Effect of thermal annealing on optical emission properties of low-temperature grown AlGaAs/GaAs multiple quantum wells".APPLIED PHYSICS LETTERS 69.23(1996):3513.

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来源:物理研究所

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