Effect of thermal annealing on optical emission properties of low-temperature grown AlGaAs/GaAs multiple quantum wells
文献类型：期刊论文
| 作者 | Feng, W ; Chen, F ; Wang, WX ; Cheng, WQ ; Yu, Y ; Huang, Q ; Zhou, JM |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 1996 |
| 卷号 | 69期号:23页码:3513 |
| 关键词 | MOLECULAR-BEAM EPITAXY CARRIER LIFETIME GAAS 200-DEGREES-C |
| ISSN号 | 0003-6951 |
| 通讯作者 | Feng, W: CHINESE ACAD SCI,INST PHYS,POB 603 36,BEIJING 100080,PEOPLES R CHINA. |
| 中文摘要 | We have investigated the effect of thermal annealing on optical emission properties of low-temperature (LT) grown AlGaAs/GaAs multiple quantum wells (MQWs) by using photoluminescence (PL) spectroscopy. For comparison, the results on normal-temperature (NT) grown MQWs implanted with protons are also presented. The LT sample was grown by molecular beam epitaxy at 310 degrees C. The as-grown LT-MQWs show moderately strong FL. Upon annealing at 600 degrees C, the PL intensity of the LT-MQWs is dramatically quenched, in sharp contrast to the large increase in PL intensity of the implanted NT-MQWs. The quenching of PL intensity in the LT-MQWs is attributed to the formation of arsenic clusters that fast trap photoexcited carriers. In addition, an enhancement in the interface intermixing and roughening induced by thermal annealing has also been observed in the LT-MQWs. (C) 1996 American Institute of Physics. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/36619]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Feng, W,Chen, F,Wang, WX,et al. Effect of thermal annealing on optical emission properties of low-temperature grown AlGaAs/GaAs multiple quantum wells[J]. APPLIED PHYSICS LETTERS,1996,69(23):3513. |
| APA | Feng, W.,Chen, F.,Wang, WX.,Cheng, WQ.,Yu, Y.,...&Zhou, JM.(1996).Effect of thermal annealing on optical emission properties of low-temperature grown AlGaAs/GaAs multiple quantum wells.APPLIED PHYSICS LETTERS,69(23),3513. |
| MLA | Feng, W,et al."Effect of thermal annealing on optical emission properties of low-temperature grown AlGaAs/GaAs multiple quantum wells".APPLIED PHYSICS LETTERS 69.23(1996):3513. |
入库方式： OAI收割
来源：物理研究所
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