Effect of thermal annealing on the microstructure of ytterbium-implanted silicon wafers
文献类型：期刊论文
| 作者 | Yang, Y ; Chen, H ; Zhou, YQ ; Li, FH |
| 刊名 | JOURNAL OF MATERIALS SCIENCE
 |
| 出版日期 | 1997 |
| 卷号 | 32期号:24页码:6665 |
| 关键词 | AMORPHOUS-SILICON CRYSTAL SILICON ERBIUM INSULATOR EPITAXY GAAS INP |
| ISSN号 | 0022-2461 |
| 通讯作者 | Yang, Y: CHINESE ACAD SCI,INST PHYS,POB 603,BEIJING 100080,PEOPLES R CHINA. |
| 中文摘要 | Ytterbium-implanted Si(001) wafers annealed at different temperatures (800, 900, 1000 and 1200 degrees C) have been examined by means of cross-section transmission electron microscopy (XTEM) and electron diffraction. The results indicate that two layers of defects exist in the samples, one mainly includes microtwins and the other includes ytterbium precipitates. The distribution and morphology of the defects depend mostly on the thermal annealing: the higher the annealing temperature, the larger the size of the defects and the closer are the layers of defects to the wafer surface. High-resolution images show the different characteristics and details of the defects under various annealing conditions. The relation between microstructure and luminescence response is also discussed. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/36620]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Yang, Y,Chen, H,Zhou, YQ,et al. Effect of thermal annealing on the microstructure of ytterbium-implanted silicon wafers[J]. JOURNAL OF MATERIALS SCIENCE,1997,32(24):6665. |
| APA | Yang, Y,Chen, H,Zhou, YQ,&Li, FH.(1997).Effect of thermal annealing on the microstructure of ytterbium-implanted silicon wafers.JOURNAL OF MATERIALS SCIENCE,32(24),6665. |
| MLA | Yang, Y,et al."Effect of thermal annealing on the microstructure of ytterbium-implanted silicon wafers".JOURNAL OF MATERIALS SCIENCE 32.24(1997):6665. |
入库方式： OAI收割
来源：物理研究所
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