Effect of Zn interstitials on the magnetic and transport properties of bulk Co-doped ZnO
文献类型:期刊论文
作者 | Shah, LR ; Zhu, H ; Wang, WG ; Ali, B ; Zhu, T ; Fan, X ; Song, YQ ; Wen, QY ; Zhang, HW ; Shah, SI ; Xiao, JQ |
刊名 | JOURNAL OF PHYSICS D-APPLIED PHYSICS
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出版日期 | 2010 |
卷号 | 43期号:3 |
关键词 | ROOM-TEMPERATURE FERROMAGNETISM THIN-FILMS MATERIALS DESIGN SEMICONDUCTORS MN EXCHANGE ZINC |
ISSN号 | 0022-3727 |
通讯作者 | Shah, LR: Univ Delaware, Dept Phys & Astron, Newark, DE 19711 USA. |
中文摘要 | We have demonstrated that the bound magnetic polaron model is responsible for ferromagnetism in Co-ZnO semiconductors, where the carriers are provided by the interstitial zinc (Zni). Our experiment is unique since by changing the temperature, we are able to cross the carrier concentration threshold above which a long-range ferromagnetic order is established. Consequently, the ferromagnetic order is observed at room temperature but is weakened at temperatures below 100 K. To support our conclusion we have performed a systematic investigation on the structural, magnetic and transport properties which all give consistent results in the context of our proposed two-region model, i.e. (a) a Zn(i) layer where carriers are sufficient to couple Co ions ferromagnetically and (b) a region with little carriers that remain in a paramagnetic state. |
收录类别 | SCI |
资助信息 | NSF DMR [0405136]; NSFC [60721001] |
语种 | 英语 |
公开日期 | 2013-09-17 |
源URL | [http://ir.iphy.ac.cn/handle/311004/36634] ![]() |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Shah, LR,Zhu, H,Wang, WG,et al. Effect of Zn interstitials on the magnetic and transport properties of bulk Co-doped ZnO[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2010,43(3). |
APA | Shah, LR.,Zhu, H.,Wang, WG.,Ali, B.,Zhu, T.,...&Xiao, JQ.(2010).Effect of Zn interstitials on the magnetic and transport properties of bulk Co-doped ZnO.JOURNAL OF PHYSICS D-APPLIED PHYSICS,43(3). |
MLA | Shah, LR,et al."Effect of Zn interstitials on the magnetic and transport properties of bulk Co-doped ZnO".JOURNAL OF PHYSICS D-APPLIED PHYSICS 43.3(2010). |
入库方式: OAI收割
来源:物理研究所
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