Effects of As pressure on optical features of low-temperature grown GaAs/AlGaAs multiple quantum wells
文献类型：期刊论文
| 作者 | Han, YJ ; Guo, LW ; Bao, CL ; Huang, Q ; Zhou, JM |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 2002 |
| 卷号 | 236期号:1-3页码:90 |
| 关键词 | BEAM-EPITAXIAL GAAS ALGAAS/GAAS DEFECT TIME |
| ISSN号 | 0022-0248 |
| 通讯作者 | Han, YJ: Chinese Acad Sci, Inst Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | Photoluminescence (PL) spectroscopy is measured to study the optical features of GaAs;Al0.3Ga0.7As multiple quantum wells grown at low temperature (LT) about 350 C by molecular beam epitaxy. Under an As-rich condition, different As pressures are used during the growth of different samples. It is found that. the full-width at half-Maximum (FWHM) of PL peaks is improved at first with the decrease of As pressure. Ho ever. it degrades owing to the appearance of shallow-level related emission peak when the As pressure is loitered further. For annealed samples. the changes of their PL features reveal that Ga vacancy (V-Ga) in the LT-sarnples can be controlled precisely by As pressure used during the growth whereas the influence of As pressure on As antisites (As-Ga) becomes significant only when As pressure is higher than 3.0 x 10 Torr. The strong dependence of PL features on As pressure is attributed to the different control effect or As pressure for V-Ga and As-Ga After the optimization of As pressure the sample with sharp PL peak and high resistivity is obtained. The FWHM of PL peak is 3.1 meV and can be compared with that of normal temperature grown sample with same structure. The result agrees well with the growth dynamics and compensation mechanism between shallow level and deep level. (C) 2002 Elsevier Science B.V. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/36666]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Han, YJ,Guo, LW,Bao, CL,et al. Effects of As pressure on optical features of low-temperature grown GaAs/AlGaAs multiple quantum wells[J]. JOURNAL OF CRYSTAL GROWTH,2002,236(1-3):90. |
| APA | Han, YJ,Guo, LW,Bao, CL,Huang, Q,&Zhou, JM.(2002).Effects of As pressure on optical features of low-temperature grown GaAs/AlGaAs multiple quantum wells.JOURNAL OF CRYSTAL GROWTH,236(1-3),90. |
| MLA | Han, YJ,et al."Effects of As pressure on optical features of low-temperature grown GaAs/AlGaAs multiple quantum wells".JOURNAL OF CRYSTAL GROWTH 236.1-3(2002):90. |
入库方式： OAI收割
来源：物理研究所
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