Effects of barrier growth temperature ramp-up time on the photoluminescence of InGaN/GaN quantum wells
文献类型：期刊论文
| 作者 | Wang, Y ; Pei, XJ ; Xing, ZG ; Guo, LW ; Jia, HQ ; Chen, H ; Zhou, JM |
| 刊名 | JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 2007 |
| 卷号 | 101期号:3 |
| 关键词 | LIGHT-EMITTING-DIODES STRUCTURE LASER-DIODES EXCITON LOCALIZATION ROOM-TEMPERATURE LAYER DOTS GAN EMISSION SHIFT HETEROSTRUCTURES |
| ISSN号 | 0021-8979 |
| 通讯作者 | Wang, Y: Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | The influence of ramp-up time of barrier growth temperature on optical properties is investigated for InGaN/GaN quantum wells deposited on sapphire substrate by metal organic chemical vapor deposition. Three ramp-up times are used from the low and high growth temperatures for the well and barrier, respectively. The results indicate that increasing the ramp-up time leads to a blueshift of the photoluminescence (PL) peak position and a broadening of the PL emission linewidth. Similarly, "S-shaped" temperature dependences of the PL peak energy are observed in all the samples. However, very different temperature dependences of PL linewidth, such as the conventional shaped, "U-shaped," and S-shaped, are observed in the samples with different ramp-up time. These effects are attributed to the redistribution of the In-rich clusters in the wells. Small quantum-dot-like In-rich clusters with high density are considered to be formed in the wells for the sample with a long ramp-up time, leading to the unconventional PL linewidth behavior and enhanced internal quantum efficiency. (c) 2007 American Institute of Physics. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/36668]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang, Y,Pei, XJ,Xing, ZG,et al. Effects of barrier growth temperature ramp-up time on the photoluminescence of InGaN/GaN quantum wells[J]. JOURNAL OF APPLIED PHYSICS,2007,101(3). |
| APA | Wang, Y.,Pei, XJ.,Xing, ZG.,Guo, LW.,Jia, HQ.,...&Zhou, JM.(2007).Effects of barrier growth temperature ramp-up time on the photoluminescence of InGaN/GaN quantum wells.JOURNAL OF APPLIED PHYSICS,101(3). |
| MLA | Wang, Y,et al."Effects of barrier growth temperature ramp-up time on the photoluminescence of InGaN/GaN quantum wells".JOURNAL OF APPLIED PHYSICS 101.3(2007). |
入库方式： OAI收割
来源：物理研究所
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