Effects of density of states on bias dependence in magnetic tunnel junctions
文献类型：期刊论文
| 作者 | Xiang, XH ; Zhu, T ; Du, J ; Landry, G ; Xiao, JQ |
| 刊名 | PHYSICAL REVIEW B
 |
| 出版日期 | 2002 |
| 卷号 | 66期号:17 |
| 关键词 | FERROMAGNETIC JUNCTIONS LARGE MAGNETORESISTANCE SPIN POLARIZATION CONDUCTANCE ELECTRONS BARRIER FILMS |
| ISSN号 | 1098-0121 |
| 通讯作者 | Xiang, XH: Univ Delaware, Dept Phys & Astron, Newark, DE 19716 USA. |
| 中文摘要 | We present a study of the bias dependence of resistance and magnetoresistance (MR) in magnetic tunnel junctions both experimentally and theoretically. A modified Brinkman model has been proposed by incorporating the voltage-dependent density of states of the ferromagnetic electrodes to explain the bias dependence of magnetoresistance and resistance in a large bias range. It has been found that a reasonable variation of the effective density of states is necessary to fit the rapid decrease of resistance and magnetoresistance under large voltage bias, indicating that the most significant contribution of the bias dependence of tunneling MR comes from the electronic structure of ferromagnetic electrodes. The calculated polarizations based on these extrapolated densities of states are in good agreement with reported values by various experiments. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/36694]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Xiang, XH,Zhu, T,Du, J,et al. Effects of density of states on bias dependence in magnetic tunnel junctions[J]. PHYSICAL REVIEW B,2002,66(17). |
| APA | Xiang, XH,Zhu, T,Du, J,Landry, G,&Xiao, JQ.(2002).Effects of density of states on bias dependence in magnetic tunnel junctions.PHYSICAL REVIEW B,66(17). |
| MLA | Xiang, XH,et al."Effects of density of states on bias dependence in magnetic tunnel junctions".PHYSICAL REVIEW B 66.17(2002). |
入库方式： OAI收割
来源：物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。