Effects of forming cavities on the lattice quality and carrier profile in the B doped silicon
文献类型：期刊论文
| 作者 | Wang, SB ; Zhu, PR |
| 刊名 | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
 |
| 出版日期 | 2000 |
| 卷号 | 72期号:2-3页码:142 |
| 关键词 | ION-IMPLANTED SILICON BORON-DIFFUSION DEFECTS |
| ISSN号 | 0921-5107 |
| 通讯作者 | Wang, SB: Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China. |
| 中文摘要 | We have used electron microscopy to investigate the microstructure of Ni80Fe20/Cu magnetic multilayers which were synthesized by dc magnetron sputtering. Columnar structure was found in the specimen with and without giant magnetoresistance (GMR). All the columnar crystallites (CCs) originate from the Fe buffer layer on silicon wafer or glass substrate and penetrate though all the multilayers up to the surface of the film. The lateral size of the CCs ranges from 10 to 30 nm. Cross-sectional high-resolution electron microscopy study shows that the CCs are single-crystal-like with fcc structure resulting from the epitaxial growth of NiFe and Cu sublayers. Electron diffraction contrast imaging and electron energy filtered elemental mapping confirmed that multilayer nature is maintained throughout the entire NiFe/Cu film. Grain boundaries between CCs can be the most likely place where NiFe or Cu bridging will occur. Columnar structure was also found in a Ta/NiFe/Cu/NiFe/FeMn/Ta spin valve film. The possible influence of the columnar crystalline structure on the GMR related problems is discussed. The microstructure results revealed in this article provide useful information for the GMR property investigation of NiFe/Cu based metallic multilayers. (C) 2000 American Institute of Physics. [S0021-8979(00)07406-5]. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/36714]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang, SB,Zhu, PR. Effects of forming cavities on the lattice quality and carrier profile in the B doped silicon[J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,2000,72(2-3):142. |
| APA | Wang, SB,&Zhu, PR.(2000).Effects of forming cavities on the lattice quality and carrier profile in the B doped silicon.MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,72(2-3),142. |
| MLA | Wang, SB,et al."Effects of forming cavities on the lattice quality and carrier profile in the B doped silicon".MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 72.2-3(2000):142. |
入库方式： OAI收割
来源：物理研究所
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