Effects of hydrostatic pressure on Raman scattering in Ge quantum dot superlattices
文献类型：期刊论文
| 作者 | Qin, L ; Shen, ZX ; Teo, KL ; Peng, CS ; Zhou, JM ; Tung, CH ; Tang, SH |
| 刊名 | THIN SOLID FILMS
 |
| 出版日期 | 2003 |
| 卷号 | 424期号:1页码:23 |
| 关键词 | SI GERMANIUM PHONONS ISLANDS SI(001) SEMICONDUCTORS SILICON ALLOYS |
| ISSN号 | 0040-6090 |
| 通讯作者 | Shen, ZX: Natl Univ Singapore, Dept Phys, Singapore 119260, Singapore. |
| 中文摘要 | Self-organized Ge/Si quantum dots (QD's) in strained Si/Ge short-period superlattices are studied by Raman scattering under hydrostatic pressure excited in-resonance and off-resonance with the confined Ge-like E, transition of Ge using 488 and 514.5 nm lines from an argon-ion laser and 632.8 nm line from a He-Ne laser. The Raman spectra of Ge-Ge, Si-Ge and Si-2TA modes of the QD's were obtained,as a function of pressure in the range of 1-70 kbar. Our results show that the mode Gruneisen parameter of the Ge-Ge phonon mode in QD's is found to be gamma = 0.81 +/- 0.01, which is smaller than that of the bulk Ge. We observe resonance effects with the confined Ge-like E, transition and the pressure coefficient of this resonating electronic transition obtained is similar to5 +/- I meV kbar(-1). (C) 2002 Elsevier Science B.V. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/36736]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Qin, L,Shen, ZX,Teo, KL,et al. Effects of hydrostatic pressure on Raman scattering in Ge quantum dot superlattices[J]. THIN SOLID FILMS,2003,424(1):23. |
| APA | Qin, L.,Shen, ZX.,Teo, KL.,Peng, CS.,Zhou, JM.,...&Tang, SH.(2003).Effects of hydrostatic pressure on Raman scattering in Ge quantum dot superlattices.THIN SOLID FILMS,424(1),23. |
| MLA | Qin, L,et al."Effects of hydrostatic pressure on Raman scattering in Ge quantum dot superlattices".THIN SOLID FILMS 424.1(2003):23. |
入库方式： OAI收割
来源：物理研究所
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