Effects of indium doping on the properties of AlAs/GaAs quantum wells and inverted AlGaAs/GaAs two-dimensional electron gas
文献类型：期刊论文
| 作者 | Shang, XZ ; Wang, WC ; Wu, SD ; Xing, ZG ; Guo, LW ; Wang, WX ; Huang, Q ; Zhou, JM |
| 刊名 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY
 |
| 出版日期 | 2004 |
| 卷号 | 19期号:3页码:519 |
| 关键词 | MOLECULAR-BEAM EPITAXY INTERFACE ROUGHNESS GROWTH SURFACE PHOTOLUMINESCENCE DIFFUSION MIGRATION MOBILITY QUALITY LENGTH |
| ISSN号 | 0268-1242 |
| 通讯作者 | Shang, XZ: Chinese Acad Sci, Inst Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | The effects of A-site average cation size (r(A)) and anti-site defects on Curie temperature (TC) and room-temperature magnetoresistance (MR) in (Sr2-xBax)FeMoO6 (x = 0, 0.4 and 1.6) have been investigated. By Ba doping, not only the room-temperature MR but also the TC have been enhanced. The larger MR in the Ba-doped samples compared with the prototype Sr2FeMoO6 is associated with the lower saturation field. The optimization of TC and MR in (Sr1.6Ba0.4)FeMoO6 other than in the reported (Sr0.4Ba1.6)wFeMoO(6) can be understood according to the two competing effects: anti-site defects and chemical pressure. (C) 2003 Elsevier Ltd. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/36740]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Shang, XZ,Wang, WC,Wu, SD,et al. Effects of indium doping on the properties of AlAs/GaAs quantum wells and inverted AlGaAs/GaAs two-dimensional electron gas[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2004,19(3):519. |
| APA | Shang, XZ.,Wang, WC.,Wu, SD.,Xing, ZG.,Guo, LW.,...&Zhou, JM.(2004).Effects of indium doping on the properties of AlAs/GaAs quantum wells and inverted AlGaAs/GaAs two-dimensional electron gas.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,19(3),519. |
| MLA | Shang, XZ,et al."Effects of indium doping on the properties of AlAs/GaAs quantum wells and inverted AlGaAs/GaAs two-dimensional electron gas".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 19.3(2004):519. |
入库方式： OAI收割
来源：物理研究所
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