Effects of TMIn flow rate of barrier layer on the optical and structural properties of InxGa1-xN/InyGa1-yN multiple quantum wells
文献类型：期刊论文
| 作者 | Zheng, XH ; Chen, H ; Yan, ZB ; Yu, HB ; Li, DS ; Han, YJ ; Huang, Q ; Zhou, JM |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 2003 |
| 卷号 | 257期号:3-4页码:326 |
| 关键词 | GROWTH INTERRUPTION LOCALIZED EXCITONS TEMPERATURE EMISSION DEPENDENCE INTERFACE THICKNESS GAP |
| ISSN号 | 0022-0248 |
| 通讯作者 | Zheng, XH: Chinese Acad Sci, Inst Phys, State Key Lab Surface Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | We reported the effect of trimethylindium (TMIn) flow rate in the barrier layer on the structural and optical properties of InxGa1-xN/InyGa1-yN multiple quantum wells (MQWs) grown on (0001)-oriented sapphire substrates by low-pressure metalorganic chemical deposition (LP-MOCVD). It was found that the change of TMIn flow rate dramatically influences the interface quality and optical properties. Temperature-dependent photoluminescence (PL) and high-resolution X-ray diffraction (HRXRD) measurements provide proof evidence that the increment of TMIn flow rate deteriorates the interfacial abruptness, decreases the emission wavelength (blue shift) and the efficiency of nonradiative recombination process. (C) 2003 Elsevier B.V. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/36834]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zheng, XH,Chen, H,Yan, ZB,et al. Effects of TMIn flow rate of barrier layer on the optical and structural properties of InxGa1-xN/InyGa1-yN multiple quantum wells[J]. JOURNAL OF CRYSTAL GROWTH,2003,257(3-4):326. |
| APA | Zheng, XH.,Chen, H.,Yan, ZB.,Yu, HB.,Li, DS.,...&Zhou, JM.(2003).Effects of TMIn flow rate of barrier layer on the optical and structural properties of InxGa1-xN/InyGa1-yN multiple quantum wells.JOURNAL OF CRYSTAL GROWTH,257(3-4),326. |
| MLA | Zheng, XH,et al."Effects of TMIn flow rate of barrier layer on the optical and structural properties of InxGa1-xN/InyGa1-yN multiple quantum wells".JOURNAL OF CRYSTAL GROWTH 257.3-4(2003):326. |
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来源：物理研究所
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