Electric resistance between Ti and abraded Si(100)
文献类型：期刊论文
| 作者 | Iwakuro, H ; Kuroda, T ; Lin, ZD |
| 刊名 | PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
 |
| 出版日期 | 1997 |
| 卷号 | 160期号:1页码:77 |
| ISSN号 | 0031-8965 |
| 通讯作者 | Iwakuro, H: SHINDENGEN ELECT MFG CO LTD,10-13 MINAMI,HANNO,SAITAMA 357,JAPAN. |
| 中文摘要 | Electric resistances between Ti and n(+)-Si(100) wafers which were ground and lapped have been examined. The grinding and lapping of the wafers leads to an increase in the ohmic resistance, but not st deviation from ohmic characteristics. The increase in the ohmic resistance does not depend on the increase in the mesh size of the grinding and the grain size of the lapping. The increase in the ohmic resistance is attributed to the existence of an amorphous layer and a polycrystalline layer, which were produced in the near-surface region of the wafer by grinding and lapping. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/36908]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Iwakuro, H,Kuroda, T,Lin, ZD. Electric resistance between Ti and abraded Si(100)[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH,1997,160(1):77. |
| APA | Iwakuro, H,Kuroda, T,&Lin, ZD.(1997).Electric resistance between Ti and abraded Si(100).PHYSICA STATUS SOLIDI A-APPLIED RESEARCH,160(1),77. |
| MLA | Iwakuro, H,et al."Electric resistance between Ti and abraded Si(100)".PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 160.1(1997):77. |
入库方式： OAI收割
来源：物理研究所
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