Electrical characterization of back-gated bi-layer MoS2 field-effect transistors and the effect of ambient on their performances
文献类型：期刊论文
| 作者 | Qiu, H ; Pan, LJ ; Yao, ZN ; Li, JJ ; Shi, Y ; Wang, XR |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2012 |
| 卷号 | 100期号:12 |
| 关键词 | GRAPHENE TRANSISTORS MONOLAYER MOS2 OXIDATION CRYSTALS |
| ISSN号 | 0003-6951 |
| 通讯作者 | Shi, Y: Nanjing Univ, Sch Elect Sci & Engn, Natl Lab Microstruct, Nanjing 210093, Jiangsu, Peoples R China. |
| 中文摘要 | Two-dimensional transition-metal dichalcogenides such as MoS2 are promising channel materials for transistor scaling. Here, we report the performance and environmental effects on back-gated bi-layer MoS2 field-effect transistors. The devices exhibit Ohmic contacts with titanium at room temperature, on/off ratio higher than 10(7), and current saturation. Furthermore, we show that the devices are sensitive to oxygen and water in the ambient. Exposure to ambient dramatically reduces the on-state current by up to 2 orders of magnitude likely due to additional scattering centers from chemisorption on the defect sites of MoS2. We demonstrate that vacuum annealing can effectively remove the absorbates and reversibly recover the device performances. This method significantly reduces the large variations in MoS2 device caused by extrinsic factors. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3696045] |
| 收录类别 | SCI |
| 资助信息 | National Science and Technology Major Project [2011ZX02707]; National Natural Science Foundation of China [61076017, 60928009, 91023041, 11174362] |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/36920]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Qiu, H,Pan, LJ,Yao, ZN,et al. Electrical characterization of back-gated bi-layer MoS2 field-effect transistors and the effect of ambient on their performances[J]. APPLIED PHYSICS LETTERS,2012,100(12). |
| APA | Qiu, H,Pan, LJ,Yao, ZN,Li, JJ,Shi, Y,&Wang, XR.(2012).Electrical characterization of back-gated bi-layer MoS2 field-effect transistors and the effect of ambient on their performances.APPLIED PHYSICS LETTERS,100(12). |
| MLA | Qiu, H,et al."Electrical characterization of back-gated bi-layer MoS2 field-effect transistors and the effect of ambient on their performances".APPLIED PHYSICS LETTERS 100.12(2012). |
入库方式： OAI收割
来源：物理研究所
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