中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Electrical properties of individual self-assembled GeSi quantum rings

文献类型:期刊论文

作者Zhang, SL ; Lv, Y ; Jiang, ZM ; Yang, XJ
刊名JOURNAL OF APPLIED PHYSICS
出版日期2011
卷号110期号:9
关键词ATOMIC-FORCE MICROSCOPY MOLECULAR-BEAM EPITAXY DOTS SI(001)
ISSN号0021-8979
通讯作者Yang, XJ: Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China.
中文摘要The nanoscale electrical properties of self-assembled GeSi quantum rings (QRs) were investigated by conductive scanning probe microscopy at room temperature. The current distribution of individual GeSi QRs measured by conductive atomic force microscopy (CAFM) shows a low conductivity at the central hole as compared to the rim; however, the QRs' composition distribution obtained by selective chemical etching combined with AFM observation reveals that within the QRs' central holes, the Ge content is high, which should lead to a high conductivity instead of a low one as observed. Together with the results obtained by scanning capacitance microscopy (SCM) and electrostatic force microscopy (EFM), it is supposed that the GeSi QRs' electrical properties are mainly determined by the ring-shaped topography, rather than by the complete oxidation of the QRs' central hole or their composition distributions. (C) 2011 American Institute of Physics. [doi:10.1063/1.3658816]
收录类别SCI
资助信息National Natural Science Foundation of China [10874030]; Major State Basic Research Project of China [2011CB925601]
语种英语
公开日期2013-09-17
源URL[http://ir.iphy.ac.cn/handle/311004/36946]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Zhang, SL,Lv, Y,Jiang, ZM,et al. Electrical properties of individual self-assembled GeSi quantum rings[J]. JOURNAL OF APPLIED PHYSICS,2011,110(9).
APA Zhang, SL,Lv, Y,Jiang, ZM,&Yang, XJ.(2011).Electrical properties of individual self-assembled GeSi quantum rings.JOURNAL OF APPLIED PHYSICS,110(9).
MLA Zhang, SL,et al."Electrical properties of individual self-assembled GeSi quantum rings".JOURNAL OF APPLIED PHYSICS 110.9(2011).

入库方式: OAI收割

来源:物理研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。