Electrical properties of individual self-assembled GeSi quantum rings
文献类型:期刊论文
作者 | Zhang, SL ; Lv, Y ; Jiang, ZM ; Yang, XJ |
刊名 | JOURNAL OF APPLIED PHYSICS
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出版日期 | 2011 |
卷号 | 110期号:9 |
关键词 | ATOMIC-FORCE MICROSCOPY MOLECULAR-BEAM EPITAXY DOTS SI(001) |
ISSN号 | 0021-8979 |
通讯作者 | Yang, XJ: Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China. |
中文摘要 | The nanoscale electrical properties of self-assembled GeSi quantum rings (QRs) were investigated by conductive scanning probe microscopy at room temperature. The current distribution of individual GeSi QRs measured by conductive atomic force microscopy (CAFM) shows a low conductivity at the central hole as compared to the rim; however, the QRs' composition distribution obtained by selective chemical etching combined with AFM observation reveals that within the QRs' central holes, the Ge content is high, which should lead to a high conductivity instead of a low one as observed. Together with the results obtained by scanning capacitance microscopy (SCM) and electrostatic force microscopy (EFM), it is supposed that the GeSi QRs' electrical properties are mainly determined by the ring-shaped topography, rather than by the complete oxidation of the QRs' central hole or their composition distributions. (C) 2011 American Institute of Physics. [doi:10.1063/1.3658816] |
收录类别 | SCI |
资助信息 | National Natural Science Foundation of China [10874030]; Major State Basic Research Project of China [2011CB925601] |
语种 | 英语 |
公开日期 | 2013-09-17 |
源URL | [http://ir.iphy.ac.cn/handle/311004/36946] ![]() |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Zhang, SL,Lv, Y,Jiang, ZM,et al. Electrical properties of individual self-assembled GeSi quantum rings[J]. JOURNAL OF APPLIED PHYSICS,2011,110(9). |
APA | Zhang, SL,Lv, Y,Jiang, ZM,&Yang, XJ.(2011).Electrical properties of individual self-assembled GeSi quantum rings.JOURNAL OF APPLIED PHYSICS,110(9). |
MLA | Zhang, SL,et al."Electrical properties of individual self-assembled GeSi quantum rings".JOURNAL OF APPLIED PHYSICS 110.9(2011). |
入库方式: OAI收割
来源:物理研究所
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